Magnetic fringe fields emanating from a multiferroic heterostructure composite of Terfenol-D and lead magnesium niobate-lead titanate were utilized to actively tune a meander line microstrip ferrite phase shifter operating above ferrimagnetic resonance at C-band. Differential phase shifts of 65° were measured when tuned with an applied voltage to the multiferroic heterostructure. This demonstra...

In this paper we present a detailed theory of electron and thermoelectric transport perpendicular to heterostructure superlattices. This nonlinear transport regime above barriers is also called heterostructure thermionic emission. We show that metal-based superlattices with tall barriers can achieve a large effective thermoelectric figure of merit (ZT > 5 at room temperature). A key parameter t...

A new octahedral ZnO/ZnFe2O4 heterostructure has been fabricated through a facile surfactant-free solvothermal method followed by thermal treatment. It exhibits a record-high adsorption capacity (up to 4983.0 mg·g(-1)) of malachite green (MG), which is a potentially harmful dye in prevalence and should be removed from wastewater and other aqueous solutions before discharging into the environmen...

Recent advances in thin-film deposition techniques, such as molecular beam epitaxy and pulsed laser deposition, have allowed for the manufacture of heterostructures with nearly atomically abrupt interfaces. Although the bulk properties of the individual heterostructure components may be well-known, often the heterostructures exhibit novel and sometimes unexpected properties due to interface eff...

This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were m...

Raman spectra of MoS2, WS2, and their heterostructures are studied by density functional theory. We quantitatively reproduce existing experimental data and present evidence that the apparent discrepancy between intensity ratios observed experimentally can be explained by the high sensitivity of the Raman-active modes to laser polarization. Furthermore, MoS2/WS2 heterostructures up to four layer...

In this paper, we investigate the electron self-energy and effective mass in a single heterostructure using Green-function method. Numerical calculations of the electron self-energy and effective mass for GaAs/AlAs heterostructure are performed. The results show that the self energy (effective mass) of electron, which incorporate the energy of electron coupling to interface-optical phonons and ...

Compressively strained InSb structures aimed for p-channel heterostructure field effect transistors (HFETs) are analysed in order to maximise their hole mobility. We optimise the heterostructure by the change of the material composition, thickness of the layers and position of δ-doping. The splitting of light and heavy hole bands in compressively strained channels are calculated by nextnano sof...

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The effects of fluorine ion bombardment on the channel transport properties of AlGaN /GaN heterostructures have been investigated. Ion bombardment of the heterostructure was carried out within a CF4 plasma in a reactive ion etching system at various self-bias voltages. Hall mobility and sheet electron concentration for the two-dimensional electron gas showed strong dependence on bombardment dur...