Current driven instabilities in the collector of III–V heterojunction bipolar transistors ~HBT! are investigated. Numerical simulations indicate that in a modified AlGaAs/GaAs HBT the collector current shows oscillatory behavior due to the transferred-electron ~Gunn–Hilsum! effect. Influence of the Kirk effect as well as conditions for oscillation are discussed. © 1995 American Institute of Phy...

In this article, we introduce novel transmission line standards for on-wafer thru-reflect-line (TRL) calibration employing a meandering architecture, which aims to keep the interprobe distance constant and avoid any probe separation during measurement process, yet establishing required signal path length between ports. Measurements will be performed up 500 GHz on passive de-embedding structures...

This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar transistor (DHBT) technology. The proposed common-emitter contains five stages, and bias circuits are used in the matching network to obtain stable high gain range. measurement results demonstrate peak of 19.5 dB at 146 GHz 3 bandwidth 56–161 (relative 96.8%). saturation output power achieves 5.9 6....

The bipolarlFET characteristics of the ZDEG-HBT (TwoDimensional Electron Gas Base p-n-p AIGaAs/GaAs Heterojunction Bipolar Transistor) are analyzed extensively by a two-dimensional numerical simulator based on a drift-diffusion model. For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f r is determined mainly by the collector transit time of ho...