Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the of overlayer, bottom dielectric pregrown Si/TiN substrate. Either HfCl4 or Hf[N(CH3)(C2H5)]4 used as metal precursor for layer. O2 plasma-assisted process applied growing from also top To improve transfer, effects surface pretreatments as-grown and ag...

Articles you may be interested in Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing Appl. Hard x-ray photoelectron spectroscopy study of As and Ga out-diffusion in In0.53Ga0.47As/Al2O3 film systems Appl.

Under solvent-free conditions (at 130 degrees C), zirconium and hafnium amine tris(phenolate) alkoxides are extremely active, well-controlled, single-site initiators for the ring-opening polymerization of rac-lactide, yielding highly heterotactic polylactide.

In this manuscript the ability of hydrogen and halogen bonding interactions, as well as metal coordination to enhance FF interactions involving fluorine substituted aromatic rings has been studied at the RI-MP2/def2-TZVPD level of theory. We have used 4-fluoropyridine, 4-fluorobenzonitrile, 3-(4-fluorophenyl)propiolonitrile and their respective meta derivatives as aromatic compounds. In additio...

The Hf-O system has been modeled by combining existing experimental data and first-principles calculations results through the CALPHAD approach. Special quasirandom structures of α and β hafnium were generated to calculate the mixing behavior of oxygen and vacancies. For the total energy of oxygen, vibrational, rotational and translational degrees of freedom were considered. The Hf-O system was...

The paper discusses the design aspects of capacitive RF MEMS Symmetric Toggle Switch (STS) with particular emphasis on device compactness, reliability, and improvement in isolation & insertion loss by incorporating hafnium dioxide (HfO2) as a dielectric material. The major impact of the change from SiO2 to HfO2 having dielectric constant of 20, is the reduction in overall dimensions of the swit...

We present an infrared spectroscopy and X-ray diffraction study of hafnium oxide gate dielectric films deposited from hafnium tetra–tertbutoxide, Hf(OC(CH3)3)4. We characterize the crystal phase as a function of thickness and detect the chemical state of impurities in this high-permittivity (high) material. The HfO2 films are composed of monoclinic crystallites in an amorphous matrix. The cryst...

Hafnium and zirconium oxide films were prepared by atomic layer deposition (ALD) from dialkylamido precursors. Water was used as the oxygen source. Nanolaminates of hafnium, zirconium and aluminum oxide were also prepared. Atomic force microscopy was used to characterize the surface morphology of 10–100 nm thick films grown from 501C to 3001C. X-ray diffraction was used to characterize the film...