Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here ...

We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on graphene channel field-effect transistors (GC-FET). These comprise gate barrier layer (BL) composed lateral hexagonal-boron nitride black-phosphorus/hexagonal-boron (h-BN/b-P/h-BN) structure. The main part GC is encapsulated in h-BN, whereas a short section sandwiched between b-P BL h-BN bot...

and Applied Analysis 3 2. Main Results and Proofs In this section, we give our main results and their proofs. Before stating these results, we need some auxiliary results, which are incorporated in the lemmas which follows. Lemma 2.1. Assume that g ∈ H Bn and μ : Bn → 0,∞ are normal. Then Tg : H∞ log → Bμ is compact if and only if Tg : H∞ log → Bμ is bounded and for any bounded sequence fk k∈N ...

In this note we solve the twisted conjugacy problem for braid groups, i.e. we propose an algorithm which, given two braids u, v ∈ Bn and an automorphism φ ∈ Aut(Bn), decides whether v = (φ(x))−1ux for some x ∈ Bn. As a corollary, we deduce that each group of the form Bn o H, a semidirect product of the braid group Bn by a torsion-free hyperbolic group H, has solvable conjugacy problem.

Monolayer MoS2 is synthesized on hexagonal boron nitride (h-BN) flakes with a simple, high-yield method. Monolayer MoS2 on h-BN exhibits improved optical quality. Combining the theoretical and experimental analysis, it is concluded that the enhanced photoluminescence and Raman intensities of monolayer MoS2 probably originate from the relatively weak doping effect from the h-BN substrate rather ...

In situ ellipsometry growth characterization of dual ion beam deposited boron nitride thin films" (2000). Faculty Publications from the Department of Electrical and Computer Engineering. 19. Pure hexagonal h, as well as mixed-phase cubic/hexagonal c/h boron nitride ͑BN͒ thin films were deposited onto ͓001͔ silicon substrates using the dual ion beam deposition technique. The BN thin films were grown...

Diamond has compelling advantages in power devices as an ultrawide-bandgap semiconductor. Using first-principles calculations, we systematically investigate the structural and electronic properties of hydrogen-terminated diamond (H-diamond) (111) van der Waals (vdW) heterostructures with graphite hexagonal boron nitride (h-BN) layers. The graphite/H-diamond heterostructure forms a p-type ohmic ...

The sliding energy landscape of the heterogeneous graphene/h-BN interface is studied by means of the registry index. For a graphene flake sliding on top of h-BN, the anisotropy of the sliding energy corrugation with respect to the misfit angle between the two naturally mismatched lattices is found to reduce with the flake size. For sufficiently large flakes, the sliding energy corrugation is ex...