In this work, we present a Density Functional Theory (DFT) study of hydrogen-passivated germanium nanowires grown along the [111] crystallographic direction. The is performed within local density approximation (LDA) and supercell technique. Four different diameters were considered surface hydrogen atoms replaced by Li ones using sequential process. results indicate that have semiconductor behav...

We report the synthesis and characterization of radial heterostructures composed of an antimony telluride (Sb2Te3) core and a germanium telluride (GeTe) shell, as well as an improved synthesis of Sb2Te3 nanowires. The synthesis of the heterostructures employs Au-catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms. Energy-dispersive X-ray spectrometry indicates that Sb and...

A simple method is developed to synthesize gram quantities of uniform Ge nanowires (GeNWs) by chemical vapor deposition on preformed, monodispersed seed particles loaded onto a high surface area silica support. Various chemical functionalization schemes are investigated to passivate the GeNW surfaces using alkanethiols and alkyl Grignard reactions. The stability of functionalization against oxi...

Abstract Once nanomaterials have been synthesized, inducing further structural modifications is challenging. However, being able to do so in a controlled manner crucial. In this context, germanium nanowires are irradiated situ within transmission electron microscope (TEM) by 300 keV xenon ion beam at temperatures ranging from room temperature (RT) 500 °C. The irradiation performed and the evolu...

We have formed compositionally abrupt interfaces in silicon-germanium (Si-Ge) and Si-SiGe heterostructure nanowires by using solid aluminum-gold alloy catalyst particles rather than the conventional liquid semiconductor-metal eutectic droplets. We demonstrated single interfaces that are defect-free and close to atomically abrupt, as well as quantum dots (i.e., Ge layers tens of atomic planes th...

SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than thre...