This paper presents the results of hydraulic test of bottom outlet of the Sivand Dam. The aims of the hydraulic model test are, gate discharge characteristics and gate loading. Results for different gate openings are also compared with calculated values obtained by a finite element method. Key-Words: Hydraulic model test, Dam, Finite element method, Gate, Gate Discharge

This paper shows that the Surrounding Gate Transistor (SGT) can be scaled down to decananometer gate lengths by using an intrinsically-doped body and gate work function engineering. Strong gate controllability is an essential characteristics of the SGT. However, by using an intrinsically-doped body, the SGT can realize a higher carrier mobility and stronger gate controllability of the silicon b...

abstract in this study, the effect of suspended load transport on the characteristics of submerged hydraulic jump (shj) in a rectangular channel was investigated experimentally. sediment concentration and jet froude numbers in the range of 0.424%-16.15% and 1.93-4.96, respectively, were considered. tow grain size 0.15 and 0.03 mm were used in the experiments. characteristics of submerged hydrau...

some issues; leakage, tunneling currents, boron diffusion are threatening sio2 to be used as a good gate dielectric for the future of the cmos (complementary metal- oxide- semiconductor) transistors. for finding an alternative and novel gate dielectric, the nio (nickel oxide) and pva (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural properties w...

Novel digital technologies always lead to high density and very low power consumption. One of these concepts is Quantum-dot Cellular Automata (QCA), which is one of the new emerging nanotechnology-based on Coulomb repulsion. This article presents three architectures of logical “XOR” gate, a novel structure of two inputs “XOR” gate, which is used as a module to implement four inputs “XOR” gate a...

Poly-SiGe is investigated as the gate material for CMOS transistors with ultra-thin Hf02 gate dielectric. Compared with polySi, poly-SiGe reduces the gate depletion effect, and also results in thinner EOT of the gate dielectric after 1000°C annealing, with low gate leakage maintained. The Si interface quality is also better than that achieved with surface nitridation, which has been used to red...

DNA gyrase introduces negative supercoils into DNA in an ATP-dependent reaction. DNA supercoiling is catalyzed by a strand-passage mechanism, in which a T-segment of DNA is passed through the gap in a transiently cleaved G-segment. Strand passage requires the coordinated closing and opening of three protein interfaces in gyrase, the N-gate, DNA-gate, and C-gate. We show here that DNA binding to...

The gate-oxide (aka gate tunneling or gate) leakage due to quantum-mechanical direct tunneling of carriers across the gate dielectric of a device is a major source power dissipation for sub-65nm CMOS circuits. In this paper a high-level (aka architecture) synthesis algorithm is presented that simultaneously schedules operations and binds to modules for gate leakage optimization. The algorithm u...

quantum-dot cellular automata (qca) has low power consumption and high density and regularity. qca widely supports the new devices designed for nanotechnology. application of qca technology as an alternative method for cmos technology on nano-scale shows a promising future. this paper presents successful designing, layout and analysis of multiplexer with a new structure in qca technique. in thi...