Gallium Arsenide (GaAs) continues to remain a material of significant importance due being preferred semiconductor substrate for the growth quantum dots (QDs) and GaAs-based devices used widely in fifth-generation (5G) wireless communication networks. In this paper, we explored aspects oblique nanomachining investigate improvement machining quality as well understand plasticity transport phenom...

Modern microelectronics and nanoelectronics devices rely on the drift of electron localized at the interfaces between different materials, such silicon and silicon dioxide or gallium arsenide and aluminum gallium arsenide. Hence, the electron drift transit time in the active region of a device determines the maximum device speed. Instead of the electron drift, we propose to use the waves of the...

Abstract Quantum Dot Infrared Photodetector (QDIP) is one of the promising candidates for infrared photodetection due to its controllable heterojunction bandgap and sensitivity normal incident radiation. It expected be superior photodetectors mature technologies such as Mercury Cadmium Telluride (HgCdTe) or a quantum well photodetector. In presented paper, we have developed theoretical model da...

This study determined the effects of gallium-aluminum-arsenide laser (GaAlAs), gallium-arsenide laser (GaAs) and Dersani healing ointment on skin wounds in Wistar rats. The parameters analyzed were: type I and III collagen fiber concentrations as well as the rate of wound closure. Five wounds, 12 mm in diameter, were made on the animals' backs. The depth of the surgical incision was controlled ...

This work reports the effect of doping concentration on energy-band structure semiconductor materials. The research focuses resultant values bandgap energy and its depletion region (length/area), based initial concentrations which are donors acceptors. diagram is simulated by initializing various materials’ properties Gallium Nitride (GaN) Arsenide (GaAs), solving Poisson’s equation derived fro...

Fibre-optic components fabricated on the same substrate as integrated circuits are important for future high-speed communications. One industry response has been the costly push to develop indium phosphide (InP) electronics. However, for fabrication simplicity, reliability and cost, gallium arsenide (GaAs) remains the established technology for integrated optoelectronics. Unfortunately, the GaA...

We calculate the spin relaxation time of conduction electrons in n-doped bulk gallium arsenide. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two scattering mechanisms result in relaxation times of equal order of magnitude, but with disimilar dependences on doping density and temperature. Our theoretical...

Due to their favorable materials properties including direct bandgap and high electron mobilities, epitaxially grown III-V compound semiconductors such as gallium arsenide (GaAs) provide unmatched performance over silicon in solar energy harvesting. Nonetheless, their large-scale deployment in terrestrial photovoltaics remains challenging mainly due to the high cost of growing device quality ep...

Abstract Silicon Hall-effect sensors have been widely used in industry and research fields due to their straightforward fabrication process CMOS compatibility. However, as material property limitations, technicians usually implement complex circuits improve the sensors’ performance including temperature drift offset compensation for fitting tough situation, but it is no doubt that increases des...

The inelastic scattering of fast electrons transmitting thin foils of silicon (Si), silicon nitride (Si(3)N(4)), gallium arsenide (GaAs), gallium nitride (GaN) and cadmium selenide (CdSe) was analyzed using dielectric theory. In particular, the impact of surface and bulk retardation losses on valence electron energy-loss spectroscopy (VEELS) was studied as a function of the foil thickness. It i...