This paper describes the relationship between the rates of charge transport (by tunneling) across self-assembled monolayers (SAMs) in a metal/SAM//Ga2O3/EGaIn junction and the geometric contact area (Ag) between the conical Ga2O3/ EGaIn top-electrode and the bottom-electrode. Measurements of current density, J(V), across SAMs of decanethiolate on silver demonstrate that J(V) increases with Ag w...

For intrinsic oxide semiconductors, oxygen vacancies served as the electron donors have long been, and inevitably still are, attributed as the primary cause of conductivity, making oxide semiconductors seem hard to act as high insulating materials. Meanwhile, the presence of oxygen vacancies often leads to a persistent photoconductivity phenomenon which is not conducive to the practical use in ...

Bulk-quantity GaN nanowires of wurtzite hexagonal structure were synthesized by using hot-filament chemical vapor deposition. GaN nanowires showed two distinctive temperature-dependent growth directions. At a substrate temperature of 900–950 C, the growth direction of GaN nanowires was perpendicular to the f10 11g plane, while at 800–900 C, the growth direction was perpendicular to {0 0 0 2}pla...

coni nanowires were deposited by pulsed electrodeposition technique into porous alumina templates. the effect of off time between pulses (toff) and reductive/oxidative time (treduc/oxid) on the microstructure and magnetic properties of the coni nanowires were investigated. maximum coercivity and squareness were obtained for samples fabricated at treduc/oxid= 0.5 ms and toff =400 ms. the coerciv...

This paper describes the influence of the substitution of fluorine for hydrogen on the rate of charge transport by hole tunneling through junctions of the form Ag(TS)O2C(CH2)n(CF2)(m)T//Ga2O3/EGaIn, where T is methyl (CH3) or trifluoromethyl (CF3). Alkanoate-based self-assembled monolayers (SAMs) having perfluorinated groups (R(F)) show current densities that are lower (by factors of 20-30) tha...

Subsolidus phase relationships in the Ga2O3–SnO2–ZnO system were determined at 1250 ◦C using solid state synthesis and X-ray powder diffraction. The two spinels, Zn2SnO4 and ZnGa2O4, formed a complete solid solution. The optical band gap of the spinel varied with composition from 3.6 eV (Zn2SnO4) to 4.7 eV (ZnGa2O4). All samples were white and insulating except those containing Ga-doped ZnO. Th...

In this work, we prepared ultra-long Si-doped β-Ga2O3 nanowires on annealed Al2O3-film/Si substrate by low-pressure chemical vapor deposition (LPCVD) assisted Au as catalyst. The length of exceeds 300 μm and diameters range from ~30 to ~100 nm in one-dimensional structures. show good crystal quality exhibit (201) orientation, confirmed transmission electron microscopy X-ray diffraction analysis...

Recent advances in the field of nanotechnology have led to the synthesis and characterization of an assortment of quasi-one-dimensional (Q1D) structures, such as nanowires, nanoneedles, nanobelts and nanotubes. These fascinating materials exhibit novel physical properties owing to their unique geometry with high aspect ratio. They are the potential building blocks for a wide range of nanoscale ...

Nanobelt is a quasi-one-dimensional structurally controlled nanomaterial that has well-defined chemical composition, crystallographic structure, and surfaces (e.g., growth direction, top/bottom surface, and side surfaces). This article reviews the nanobelt family of functional oxides, including ZnO, SnO2, In2O3, Ga2O3, CdO, and PbO2 and the relevant hierarchical and complex nanorods and nanowir...