We perform molecular dynamics (MD) simulations to investigate the effect of polar surfaces on the thermal transport in zinc oxide (ZnO) nanowires. We find that the thermal conductivity of nanowires with free polar (0001) surfaces is much higher than that of nanowires that have been stabilized with reduced charges on the polar (0001) surfaces, and also hexagonal nanowires without any transverse ...

We have fabricated the vertically aligned coaxial or longitudinal heterostructure GaN/InGaN nanowires. The GaN nanowires are first vertically grown by vapor-liquid-solid mechanism using Au/Ni bi-metal catalysts. The GaN nanowires are single crystal grown in the [0001] direction, with a length and diameter of 1 to 10 μm and 100 nm, respectively. The vertical GaN/InGaN coaxial heterostructure nan...

A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demons...

Ni-catalyzed Si-based heterostructure nanowires grown on crystal Si substrates by hot-wire chemical vapor deposition (HWCVD) were studied. The nanowires which included NiSi nanowires, NiSi/Si core-shell nanowires, and NiSi/SiC core-shell nanowires were grown by varying the filament temperature T f from 1150 to 1850 °C. At a T f of 1450 °C, the heterostructure nanowires were formed by crystallin...

Quasi one-dimensional nanowires possess unique electrical, electronic, thermoelectrical, optical, magnetic and chemical properties, which are different from that of their parent counterpart. The physical properties of nanowires are influenced by the morphology of the nanowires, diameter dependent band gap, carrier density of states etc. Nanowires hold lot of promises for different applications....

CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched polycarbonate membrane as scaffolds and their material and electrical properties were systematically investigated. As-deposited CdTe nanowires show nanocrystalline cubic phase structures with grain sizes of up to 60 nm. The dark-field images of nanowires reveal that the crystallinity of nanowires wa...

Nanowires with 5 nm diameter made of silver, copper, and their alloys were grown in superfluid helium. The silver nanowires being heated to 300 K disintegrated into individual clusters. In contrast, copper nanowires were stable at room temperature, and nanowires made of alloys were also stable despite their low melting temperature.

The electrical transport and chemical sensing properties of individual multisegmented Au-poly(3,4-ethylenedioxythiophene)(PEDOT)-Au nanowires have been investigated. Temperature dependent conductivity measurements show that different charge transport mechanisms influence these properties in two types of PEDOT nanowires. Charge transport in PEDOT/poly(4-styrenesulfonic acid) (PSS) nanowires is i...

We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of tungsten by chemical vapor deposition (CVD) using WF6 as the precursor. With selective CVD, the process is self-limiting whereby the tungsten formati...

Address correspondence to [email protected] ABSTRACT InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation. The catalytic growth of nonepitaxial InAs nanowires, however, has often relied on the use of Au colloids which is non-CMOS compatible. Here, we demonstrate ...