The etching of uranium oxide films was investigated with a non-thermal, atmospheric pressure plasma fed with a mixture of 2.0 kPa carbon tetrafluoride, 880.0 Pa oxygen and 97.2 kPa helium. Etching rates of up to 4.0 lm/min were recorded at a 200 C sample temperature. X-ray photoemission spectroscopy revealed that the etched surface was highly fluorinated, containing UOF4 species during the etch...

Etching of crystalline silicon by potassium hydroxide (KOH) etchant with temperature variation has been studied. Results presented here are temperature dependent ER (etch rate) along the crystallographic orientations. Etching and activation energy are found to be consistently favorable with the thermal agitation for a given crystal plane. Study demonstrates that the contribution of microscopic ...

A novel nanoscale etch process of metallic structures, the metal peel-off method(MPOM), is developed. The etching area can be defined photolithographically on the exposed substrate. Utilizing galvanic displacement as well as selective etching process after photolithographic process, we simply and uniformly achieve self-controlled etch rate of 32.2±2.1nm/times through whole wafer level. MPOM pro...

Plasma etching of lithium niobate with fluorine gases is limited by the redeposition LiF. This results in a low etch rate and nonvertically etched walls. Etching of proton-exchanged lithium niobate can prevent the LiF deposition to a large extent because of the greatly reduced lithium concentration in lithium niobate. We performed different inductively coupled plasma etching processes using SF6...

Measurements using the LR 115 solid-state nuclear track detector (SSNTD) depend critically on the removed thickness of the active layer during etching, which cannot be controlled by the etching period alone. For example, the bulk etch rate depends significantly on the strength of stirring during etching. We propose here a fast, inexpensive and nondestructive method based on a color commercial d...

Relationship between the rate of electrochemical formation of mesoporous Si and the crystallographic directions has been studied by local anodization of wafers through a mask having the form of narrow long wedges radiating from the center in all directions ('wagon-wheel' mask). The etching rates were found from the side etching under the thin transparent n-Si mask. On p+-substrates of various o...

In this article the effects of process parameters of CHF31N2 plasma etching chemistry ~rf power 50–70 W, pressure 22.5–52.5 mTorr, and N2 content 0%–95%! and mask materials ~photoresist, aluminum, and silicon nitride! on the etching selectivity of silicon nitride over polysilicon are investigated. It was found that the selectivity increased with the N2 content in the range of 0%–85% and then de...

A thin film polarization filter has been patterned and etched using reactive ion etching (RIE) in order to create 8 by 8 microns square periodic structures. The micropolarization filters retain the original extinction ratios of the unpatterned thin film. The measured extinction ratios on the micropolarization filters are approximately 1000 in the blue and green visible spectrum and approximatel...

Figure 1 . Anisotropic etching of graphite by H 2 -plasma. a–c) AFM images of pristine, 50 W plasma-etched, and 100 W plasma-etched graphite. Plasma etching was performed at 500 ° C for 2 h. Magnifi ed images for the marked areas are shown. d) Measured maximum etching rate of graphite at various etching temperatures. The plasma power was 100 W. Solid lines represent Lorentzian line shape fi ts....