In this tutorial we review recent progress in the design and growth of epitaxial semiconductor nanostructures in lattice-mismatched material systems. We focus on the Ge on Si model system after pointing out the similarities to III-V and other growth systems qualitatively as well as quantitatively. During material deposition, the first layers of the epitaxial film wet the surface before the form...

we adapt the level-set method to simulate epitaxial growth of thin films on a surface that consists of different reconstruction domains. Both the island boundaries and the boundaries of the reconstruction domains are described by different level-set functions. A formalism of coupled level-set functions that describe entirely different physical properties is introduced, where the velocity of eac...

In-plane aligned, c-axis oriented YBazCu307 (YBCO) films with superconducting critical current densities, Jc, as high as 700,000 amperes per square centimeter at 77 kelvin have been grown on thermo-mechanically, rolled-textured (00 1) Ni tapes using pulsed-laser deposition. Epitaxial growth of oxide buffer layers directly on biaxially textured Ni, formed by recrystallization of cold-rolled pure...

In this study PbTiO 3 thin films were deposited using metalorganic vapor phase epitaxy (MOVPE). Titanium-isopropoxide and tetraethyl-lead were used as the Ti and Pb precursors, and 0 2 was the oxidizing gas. A wide range of conditions for preparing high quality PbTiO 3 thin film were investigated. The epitaxial PbTiO 3 thin films were grown on (001) SrTiO 3 substrates at a growth temperature of...

Controlling chirality in growth of single-walled carbon nanotubes (SWNTs) is important for exploiting their practical applications. For long it has been conceptually conceived that the structural control of SWNTs is potentially achievable by fabricating nanoparticle catalysts with proper structures on crystalline substrates via epitaxial growth techniques. Here, we have accomplished epitaxial f...

SiC is a candidate material for microand nano-electromechanical systems (MEMS and NEMS). In order to understand the impact that the growth rate has on the residual stress of CVDgrown 3C-SiC hetero-epitaxial films on Si substrates, growth experiments were performed and the resulting stress was evaluated. The film thickness was held constant at ~2.5 μm independent of the growth rate so as to allo...

The applicability of a novel silicon precursor with respect to reasonable nanowire (NW) growth rates, feasibility of epitaxial NW growth and versatility with respect to diverse catalysts was investigated. Epitaxial growth of Si-NWs was achieved using octochlorotrisilane (OCTS) as Si precursor and Au as catalyst. In contrast to the synthesis approach with SiCl(4) as precursor, OCTS provides Si w...

Data are presented demonstrating a low thermal resistance lithographic laser. An 8 mm vertical-cavity surface emitting laser defined using lithography and epitaxial crystal growth provides output power of 14 mW, slope efficiency of 0.88 W/A corresponding to differential quantum efficiency of 70% and power conversion efficiency of 26%. Low thermal resistance, even without heatsinking, results in...

In this work, we describe the homoand hetero-epitaxial growth of hexagonal and cubic MgxZn1−xO thin films on lattice matched substrates of c-Al2O3, ZnO, MgO and SrTiO3. The crystalline quality, composition and epitaxial nature of the alloy films are obtained by x-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques. The RBS channeling yields are in the range 3–8% for homo...

We performed total energy calculations on strained tetragonal states of bulk fcc palladium by means of density functional theory using the local density approximation. Coherent epitaxial growth of thin films on cubic (001) substrates results in such strained structures due to heteroepitaxy with mismatch. We obtained what is called the epitaxial Bain path of palladium, a structural transition be...