Spin relaxation of electrons doped in InP quantum dots was studied by means of luminescence pump-probe and Hanle measurements. Optical pumping makes spins of doped electrons to be oriented in parallel to the helicity of the circularly polarized excitation. The luminescence pump-probe showed the spin orientation of the doped electrons decay on a millisecond time-scale. Hanle measurement clarifie...

In the recent two decades the technique of high-resolution transmission electron microscopy (HRTEM) experienced an unprecedented progress through the introduction of hardware aberration correctors and by the improvement of the achievable resolution to the sub-Ångström level. With this development, also the required precision level to measure and adjust the optical properties of transmission ele...

The lifetimes of electrons at the interface between 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA) and Ag(111) have been studied by means of time- and angle-resolved two-photon photoemission. We observe a dispersing unoccupied state 0.6 eV above the Fermi level with an effective electron mass of 0.39m{e} at the Gamma[over ] point. The short lifetime of 54 fs is indicative of a large...

Growing technological challenges and soaring costs are gradually bringing the MOSFET scaling to an end. This intensifies the search of alternative technologies and computational principles. The electron spin attracts attention as a possible candidate to be used in future electron devices for complimenting or even replacing the charge degree of freedom employed in MOSFETs. The spin state is char...

The lifetime of the emission of a single electron stored in a nanocrystalline Si ~nc-Si! dot has been studied in order to understand the physical processes for memory applications. A small active area field effect transistor channel ~50325 nm! is defined by electron-beam lithography on a thin ~20 nm! silicon-on-insulator channel and allows for the electrical isolation of a single nc-Si dot. Rem...

We discuss a novel approach to measure the electron phase-relaxation length and femtosecond lifetimes at surfaces. It relies on the study of the spatial decay of quantum interference patterns in the local density of states (LDOS) with the STM. The method has been applied to s–p derived surface-state electrons on Cu(111) and Ag(111). The characteristic decay length of the LDOS oscillations is in...

Motivated by a recent tunneling experiment in a double quantum-well system, which reports an anomalously enhanced electronic scattering rate in a clean two-dimensional electron gas, we calculate the inelastic quasiparticle lifetime due to electron-electron interaction in a single loop dynamically screened Coulomb interaction within the random-phase-approximation. We obtain excellent quantitativ...