The Graphene based single electron transistor (SET) as a coulomb blockade device need to be explored .It is a unique device for high-speed operation in a nano scale regime. A single electron transfers via the coulomb barriers, but its movement may be prevented by coulomb blockade, so its effect is investigated in this research. The conditions of coulomb blockade and its controlling factors such...

The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-j dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-j dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characteriza...

A dual-band artificial magnetic material and then a dual-band double-negative metamaterial structure based on symmetric spiral resonators are presented. An approximate analytical model is used for the initial design of the proposed structures. The electromagnetic parameters of the proposed metamaterial structure retrieved using an advanced parameter retrieval method based on the causality princ...

In this paper we present some redudancy routing protocols for dual gate networking of a cellular network. To perform routing protocols We have to explain the networking communication on wireless sensor networks which can vary from a simple star network to an advanced multi-hop wireless mesh network like MANET & VANET which is adhoc networks for vehicular and mobile networks by using Dual gate P...

In this paper, a new low voltage MOSFET (LV MOSFET) and high dual-gate (HV DG have been proposed with concept of integration based on trench technology InGaAs material. Junction isolation technique is used for the implementation power dual gate in same epitaxial layer side by side. The HV consists that are placed drift region under oxide-filled trenches. structure minimize on-resistance (Ron) a...

In this research work, a Cylindrical Surrounding Double-Gate (CSDG) MOSFET design in stacked-Dual Metal Gate (DMG) architecture has been proposed to incorporate the ability of gate metal variation channel field formation. Further, internal gate's threshold voltage ( V TH1 ) could be reduced compared external TH2 by arranging work-function Double devices. Therefore, device CSDG realized instigat...

During the design of a two-cavity injection mould for router covers, two plans, single-gate plan and dual-gates plan, were setup based on the results of best gate location analysis combined with other aspects. Then fill analysis for the two plans were carried out. The dual-gates plan was selected as an optimal choice for its smaller clamping force, wall shear stress and injection pressure in co...