نتایج جستجو برای: doping additive
تعداد نتایج: 93371 فیلتر نتایج به سال:
Polymorphism of tricalcium silicate were prepared by a calcination method with Ca(OH)2 and SiO2 as crude materials and Co2O3 as doping agent. The solid solution mechanism of Co2O3 during C3S formation were studied by means of chemical analysis, XRD and phase diagram analysis. The results show: according to phase analyse of CaO-CoO and CoO-SiO2, Co2O3 accelerated solid reaction of CaO-SiO2. When...
Surface charge transfer is presented as an effective doping technique for III−V nanostructures. We generalize that the technique is applicable to nanoscale semiconductors in the limit where carriers are quantum confined. As a proof-of-concept, potassium surface charge transfer doping is carried out for one-dimensional (1D) and two-dimensional (2D) InAs on Si/SiO2 substrates. Experiments and sim...
Poor crystallinity, high degree of porosity and rough surfaces are the main drawbacks solution-processed CIGS absorbers resulting in lower power conversion efficiencies when compared to vacuum-based solar cells. Therefore, promoting absorber grain growth is key further improve solution-based cell performance. The effect alkali elements such as Na generally recognised have beneficial effects not...
OBJECTIVES To examine the attitudes to, and knowledge of, doping in sport of French general practitioners (GPs), and their contact with drug taking athletes on an everyday basis. METHODS A total of 402 GPs were randomly selected from all over France and interviewed by telephone, using a prepared script. RESULTS The response rate was 50.5% (153 men and 49 women; mean (SD) age 45.6 (5.6) year...
BACKGROUND There is a growing body of empirical evidence on demographic and psychosocial predictors of doping intentions and behaviors utilizing a variety of variables and conceptual models. However, to date there has been no attempt to quantitatively synthesize the available evidence and identify the strongest predictors of doping. OBJECTIVES Using meta-analysis, we aimed to (i) determine ef...
In high-transition-temperature superconducting cuprates and iron arsenides, chemical doping plays an important role in inducing superconductivity. Whereas in the cuprate case, the dominant role of doping is to inject charge carriers, the role for the iron arsenides is complex owing to carrier multiplicity and the diversity of doping. Here, we present a comparative study of the in-plane resistiv...
Wide-band-gap II-VI semiconductors have a potential for a variety of applications especially in the areas of light-emitting and light-detecting devices, photovoltaic conversion (solar cells), X-ray and "t--ray detection, etc. In all applications, a good bipolar electrical conduction, i.e. efficient doping from both nand p-side is essential, but due to the reasons which are not yet fully underst...
This study aimed to assess pharmacy students’ knowledge about doping substances used in sport, explore their attitudes toward doping and investigate their misuse of doping drugs. A questionnaire was developed and employed to collect data from bachelor of pharmacy (BPharm) students at the International University for Science and Technology (IUST). Two-hundred and eighty students participated in ...
The possibility of reliable and reproducible p-type doping of (31 l)A GaAs by Si during molecular-beam epitaxial growth and the application of such doping in the realization of high-performance electronic devices have been investigated. It is seen that p-type doping upto a free hole concentration of 4~ lOI cmB3 can be obtained under conditions of low As, flux and high ()660 “C) growth temperatu...
We study the effect of delta-doping on the hole capture probability in ten-period p-type Ge quantum dot photodetectors. The boron concentration in the delta-doping layers is varied by either passivation of a sample in a hydrogen plasma or by direct doping during the molecular beam epitaxy. The devices with a lower doping density is found to exhibit a lower capture probability and a higher photo...
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