In order to calculate the redis tr ibut ion of boron in silicon by both diffusion and autodoping dur ing epitaxial growth, certain materials parameters must be known as a function of temperature. The parameters are the diffusion coefficient of boron, the evaporat ion coefficient of boron from silicon, and the silicon evaporation rate in a hydrogen ambient. The value of the diffusion coefficient...

We have synthesized a new green fluorescent dopant C-545P having incorporated five strategically placed "methyl" steric spacers on the julolidyl ring system. C-545P has good thermal properties and photostability, and when fabricated as a dopant in an Alq(3)-hosted OLED device, it shows notable improvement in luminance efficiency and is more resistant to concentration quenching than C-545T, part...

We report on three-dimensional (3D) imaging of individual Gd dopant atoms in a thin (∼2.3  nm) foil of SrTiO3, using quantitative scanning transmission electron microscopy. Uncertainties in the depth positions of individual dopants are less than 1 unit cell. The overall dopant concentration measured from atom column intensities agrees quantitatively with electrical measurements. The method is a...

We have overcome the synthetic difficulty of 9,9',9'',9''',9'''',9'''''-((phenylsilanetriyl)tris(benzene-5,3,1-triyl))hexakis(9H-carbazole) (SimCP3) an advanced homologue of previously known SimCP2 as a solution-processed, high triplet gap energy host material for a blue phosphorescence dopant. A series of organic light-emitting diodes based on blue phosphorescence dopant iridium (III) bis(4,6-...

We have developed an atomistic model for dopant diffusion in SiGe structures and we have implemented it in the kinetic Monte Carlo process simulator DADOS. The model takes into account (i) composition and stress effects on the diffusivity of interstitials, vacancies and dopants, (ii) SiGe interdiffusion, (iii) dopant segregation and (iv) the modifications of band-gap and charge levels. The mode...

Electron energy-loss spectroscopy (EELS) in combination with scanning transmission electron microscopy (STEM) reveals that the La enrichment at the surface of cerium-lanthanum solid solutions is an averaged effect and that segregation occurs in a mixed oxide phase. This separation occurs within a crystalline particle, where the dopant-rich phase is located at the surface of the dopant-deficient...

Quantitative ADF-STEM imaging paired with image simulations has proven to be a powerful technique for determining the three dimensional location of substitutionally doped atoms in thin films. Expansion of this technique to lightly-doped nanocrystals requires an understanding of the influence of specimen mistilt on dopant visibility due to the difficulty of accurate orientation determination in ...

We report the study of gold-SrTiO3 (STO)-gold memristors where the doping concentration in STO can be fine-tuned through electric field migration of oxygen vacancies. In this tunnel junction device, the evolution of the density of states (DOS) can be followed continuously across the metal-insulator transition (MIT). At very low dopant concentration, the junction displays characteristic signatur...