This paper highlights the capability of materials informatics to recreate "property phase diagrams" from an elemental level using electronic and crystal structure properties. A judicious selection of existing data mining techniques, such as Principal Component Analysis, Partial Least Squares Regression, and Correlated Function Expansion, are linked synergistically to predict bandgap and lattice...

This research program utilizes the chemical beam epitaxy laboratory and emphasizes the epitaxial growth of a wide variety of compound semiconductors (both Il-VI and Ill-V), as well as multilayered structures composed of II-VI/II-VI, II-VI/III-V and Ill-V/III-V heterostructures. The chemical beam epitaxy laboratory consists of two gaseous source epitaxy reactors (Il-VI dedicated and Ill-V dedica...

2014 Current theoretical models on self-compensation in large gap semiconductors assume that intrinsic stoichiometric defects dominate and explain electrical properties quite satisfactorily without any contribution from impurities. Some recent results show on the contrary that impurities are in fact dominant at least at room temperature. The paper, starting from one particular material (ZnTe), ...

Several research groups have been actively pursuing antimonide-based electronic devices in recent years. The advantage of narrowbandgap Sb-based devices over conventional GaAsor InP-based devices is the attainment of high-frequency operation with much lower power consumption. This paper will review the progress on three antimonide-based electronic devices: high electron mobility transistors (HE...

In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devic...

The infrared spectra of amorphous films of Gap, GaAs, GaSb, InAs, and Ge prepared by sputtering have been measured from 10 to 4000 cm-1. The absorption spectra in the region of the “optical” phonon frequencies show similarities to the phonon density of states as deduced from Raman scattering but the absorption becomes much smaller a t low frequencies. It is shown that while the coupling constan...

Current state-of-the-art epitaxial growth techniques employ various metalorganic and hydride gases to deliver constituent species to the substrate surface, particularly high vapor pressure species such as phosphorus and sulfur. Gas source molecular beam epitaxy (GSMBE) utilizes hydride gas sources and solid elemental sources. The more conventional growth approach, molecular beam epitaxy (MBE), ...

Deposition of semiconductors and metals from chemical precursors onto planar substrates is a well-developed science and technology for microelectronics. Optical fibers are an established platform for both communications technology and fundamental research in photonics. Here, we describe a hybrid technology that integrates key aspects of both engineering disciplines, demonstrating the fabricatio...

Gold contacts to most III-V and II-VI compounds position the Fermi level at the interface well into the energy gaps of the semiconductors. To position the Fermi level closer to a conduction-band edge, particularly in the more ionic semiconductors, one may substitute a more electropositive element like AI for the Au contact. To position the Fermi level closer to a valence-band edge, however, the...