The hot-carrier effect and dynamics in GaAs solar cell device performance were investigated. Hot-carrier cells based on the conventional operation principle simulated detailed balance thermodynamic model hydrodynamic energy transportation model. A quasi-equivalence between these two models was demonstrated for first time. In simulation, a specially designed used, an increase open-circuit voltag...

Articles you may be interested in Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence J. Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN Appl. Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN Carrier relaxation ...

Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.

The identities of photoexcited states in thin-film Co3O4 and the ultrafast carrier relaxation dynamics of Co3O4 are investigated with oxidation-state-specific pump−probe femtosecond core level spectroscopy. A thin-film sample is excited near the 2.8 eV optical absorption peak, and the resulting spectral changes at the 58.9 eV M2,3edge of cobalt are probed in transient absorption with femtosecon...

Since the first report of single-layer graphene a few years ago, this material has already proven to possess a great number of interesting properties. One of these properties is its non-linear optical behavior, namely its wavelength-independent saturation of optical absorption. This saturable absorption can be utilized to induce self-amplitude modulation in a laser cavity, thus mode-locking las...

We have used time- and angle-resolved photoemission spectroscopy (tr-ARPES) to assess the influence of many-body interactions on the Dirac carrier dynamics in graphene. From the energy-dependence of the measured scattering rates we directly determine the imaginary part of the self-energy, visualizing the existence of a relaxation bottleneck associated with electron-phonon coupling. A comparison...

We explore the charged-impurity-scattering-limited mobility of electrons and holes in monolayer black phosphorus (BP), a highly anisotropic material. Taking full account of the anisotropic electronic structure in effective mass approximation, the zero-temperature momentum relaxation time and the charge carrier mobility are calculated based on the Boltzmann transport equation. For carrier densit...

Two quantum-kinetic models, governing the transport of an initial highly non-equilibrium carrier distribution generated locally in a nanowire, are explored. Dissipation processes due to phonons govern the carrier relaxation, which at early stages of the evolution is characterized by the lack of energy conservation in the collisions. The models are analyzed and approached numerically by a backwa...

By analysing the carrier dynamics based on the rate equations and the change of the refractive index due to the efficient carrier capture, we have calculated the carrier capture process in the InAs/GaAs system detected by a simple degenerate pump–probe technique. The calculated results are found to be in good agreement with the experimental findings. Our results indicate that this simple techni...

The use of a differential capacitance technique for characterizing the relaxation-induced defect states in Schottky diodes has been studied. Based on a proposed equivalent circuit including the effect of potential drop across the carrier-depletion layer, a simple equation of capacitance at different voltages and frequencies is derived and compared with experimental data obtained from relaxed In...