The improvement in reverse recovery of power NPN bipolar transistor (BJT) through incorporation of ‘‘universal contact’’ in the base is studied in detail. It is shown that use of universal contact allows redistribution of base current in saturation from collector region where recombination lifetime is high to extrinsic base region where effective recombination lifetime is low. The reverse recov...

GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are promising for high-voltage power switching applications. A concern with this new device technology is oxide reliability under prolonged high-field and high-temperature conditions. This paper studies an important aspect of oxide reliability, time-dependent dielectric breakdown (TDDB) in GaN MIS-HEMTs. We have de...

While choosing insulating oil, characteristic features such as thermal cooling, endurance, efficiency and being environment-friendly should be considered. Mineral oils are referred as petroleum-based oil. In this study, vegetable oils investigated as an alternative insulating liquid to mineral oil. Dissipation factor, breakdown voltage, relative dielectric constant and resistivity changes with ...

The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions. The scaling of devices with gate lengths of 120, 90, 70, 50 and 30 nm has been performed in both lateral and vertical directions. The impact ionization is treated as an additional scattering mechamism in the Mon...

This paper presents results of experimental investigations on natural esters dielectric and coolant fluids regarding the breakdown strength. The breakdown voltage (BDV) for small and medium oil gaps (from 2 mm up to 40 mm) under AC and lightning impulse (LI), uniform and non-uniform electrical field is measured. Experiments involve new, aged and with mineral oil contaminated natural esters. The...

We fabricated high standoff voltage ~450 V! Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, mesa devices, and Schottky metal field plate overlapping a SiO2 layer. The best devices were characterized by an ON-state voltage of 4.2 V at a curr...

The measured photomultiplication and excess noise characteristics of two 4H-SiC p-i-n diodes, with i-region widths of 0.105 μm and 0.285 μm, were modelled using a nonlocal multiplication model to determine the ionization threshold energies and the impact ionization coefficients of 4H-SiC. The modelled ionization coefficients accurately predicted the breakdown voltage of a 0.485 μm p-i-n structu...

We report the simulation results of 25μm half cell pitch vertical type 4H-SiC DiMOSFET using the general-purpose device simulator MINIMOS-NT. The best trade-off between breakdown voltage and on-resistance in terms of BFOM is around 19MW/cm 2 with a p-well spacing 5μm. The specific on -resistance, RON, sp, simulated with VGS=10V and VDS=1V at room temperature, is around 22.76mΩcm 2 . An 900V bre...

A design methodology for the edge termination is proposed to achieve the same breakdown voltage of the non-uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) cell structure. A simple analytical solution for the effect of charge imbalance on the termination region is suggested, and it is satisfied with the simulation of potential distribution. The dopi...

We discuss the assessment of breakdown probabilities by means of the up-and-down method. The exact maximum likelihood estimates for a number of response patterns are calculated for three different distribution functions and are compared with the estimates corresponding to the normal distribution. Estimates of the 50% probability breakdown voltage and of the scale parameter of the breakdown prob...