This manuscript describes the findings of a study to investigate the performance of SiC MEMS resonators with respect to resonant frequency and quality factor under a variety of testing conditions, including various ambient pressures, AC drive voltages, bias potentials and temperatures. The sample set included both single-crystal and polycrystalline 3C-SiC lateral resonators. The experimental re...

Tantalum oxide films have been deposited by sputtering of tantalum target in an oxygen partial pressure of 2x10 mbar under various substrate bias voltages in the range from 0 to -150 V on glass and silicon substrates held at room temperature. The influence of substrate bias voltage on the chemical binding configuration, crystallographic structure, electrical and dielectric properties has been s...

The temperature dependence of capacitance–voltage (C–V) and the conductance–voltage (G/w–V) characteristics of (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures were investigated by considering the effect of series resistance (Rs) and interface states Nss in a wide temperature range (79–395 K). Our experimental results show that both Rs and Nss were found to be strongly functional with temperature a...

We report measurements of the resistance and the current-voltage characteristics of aluminum thin films which have two regions of different superconducting transition temperatures. Local suppression of the transition temperature is achieved by the use of a CF4 reactive ion-etching technique. A small gradient in the transition temperature is induced around the lithographically defined etched-une...

This paper proposes a novel design method to minimize the leakage power during standby mode using a novel optimal supply voltage and body-bias voltage generating technique for nanoscale VLSI systems. The minimum level of VDD is generated for different temperature and process conditions adaptively using a look-up-table method. The subthreshold current as well as gate-tunneling and bandto-band-tu...

We present local and non-local electron transport measurements on individual multi-wall nanotubes for bias voltage between 0 and about 4 V. Local current-voltage characteristics are quite linear. In contrast, non-local measurements are highly non-linear; the differential non-local conductance can even become negative in the high-bias regime. We discuss the relationship between these results and...