Articles you may be interested in Acoustic phonon assisted free-carrier optical absorption in an n-type monolayer MoS2 and other transition-metal dichalcogenides J. Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects Appl. Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field ...

Nanostructures of CaF2 and CaF1 on Si~111! are used to demonstrate a chemical imaging method for insulators. Chemical sensitivity is achieved in scanning tunneling microscopy via a sharp drop of the tunneling current for bias voltages below the conduction-band minimum. This imaging method has a spatial resolution of better than 1 nm and distinguishes different oxidation states. A resonance is f...

We show that surface states within the conduction band of n-type GaAs 110 surfaces play an important role in reducing the tunneling current out of an accumulation layer that forms due to an applied potential from a nearby probe tip. Numerical computation of the tunneling current combined with an electrostatic potential computation of the tip-induced band bending TIBB reveals that occupation of ...

Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions with InGaAs-like interfaces. Band offsets are probed using conductance spectra, with tip-induced band bending accounted for using 3-dimensional electrostatic potential simulations together with a planar computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP ...

Variation of the local electronic structure at rutile TiO2(110) surfaces was studied by scanning tunneling spectroscopy ~STS!. Structural surface features such as step edges, (132) reconstructed strands, and their terminations were correlated to changes in tunneling spectra. In particular, band-gap states, associated with a reduced surface, showed characteristic variations. In addition, electro...

We examine room temperature band-to-band tunneling in 2D InAs/3D GaSb heterostructures. Specifically, multi-subband, gate-controlled negative differential resistance is observed in InAs/ AlSb/GaSb junctions. Due to spatial confinement in the 10 nm-thick InAs layer, tunneling contributions from two distinct subbands are observed as sharp steps in the current-voltage characteristics. It is shown ...

On NaCl(100)/Cu(111) an interface state band is observed that descends from the surface-state band of the clean copper surface. This band exhibits a Moiré-pattern-induced one-dimensional band gap, which is accompanied by strong standing-wave patterns, as revealed in low-temperature scanning tunneling microscopy images. At NaCl island step edges, one can directly see the refraction of these stan...

Atomic force and high resolution scanning tunneling analyses were carried out on nanostructured WO3 films. It turned out that the band gap measured by scanning tunneling spectroscopy at surface is lower than the band gap reported in the literature. This effect is attributed to the high density of surface states in this material, which allows tunneling into these states. Such a high density of s...