نتایج جستجو برای: aluminium nitride
تعداد نتایج: 29246 فیلتر نتایج به سال:
has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...
We have used first-principles calculations to investigate the mixing enthalpies, lattice parameters and electronic density of states of the ternary nitride systems Ti1−xAlxN, Cr1−xAlxN, Sc1−xAlxN and Hf1−xAlxN in the cubic B1 structure where the transition metals and aluminium form a solid solution on the metal sublattice. We discuss the electronic origins of the possible isostructural decompos...
Anisotropic effects in hexagonal aluminium nitride have been studied by electron energy-loss spectroscopy (EELS) in the N-K energy loss near edge structure (ELNES). Experimental data acquired with different collection angles and with a nearly parallel incident electron beam aligned along the c-axis have been compared to simulations based on ab initio calculations. The extraction of intrinsic pa...
Aluminium nitride (AlN) one-dimensional (1D) nanostructures, including crystalline nanowires, faceted nanotubes and conventional single-walled nanotubes, were investigated by means of density functional theory (DFT) using the generalized gradient approximation (GGA). While the larger diameter crystalline nanowires are the most favoured energetically of all these 1D nanostructures, the thick fac...
The present study focuses on optimization of operating parameters in wire electric discharge machining AA2024 aluminium alloy reinforced with lithium and silicon nitride particles. Aluminium composite was produced through the two-step stir casting route combination 2% 10% reinforcements. Experiments were performed using Taguchi design experiments to optimize selected input such as pulse time, o...
The RF band pass filters are important for wireless communication applications. They can be realized using Thin Film Bulk Acoustic Resonator (TFBAR).TFBAR is designed using Aluminium Nitride (AlN) and electrodes of piezoelectric material are made with Platinum (Pt).Various modelling techniques has been used for realizing three layered TFBAR structure. Modified Butter w...
The features of the formation an intermetallic Ni 3 Al coating by cold spraying a Ni-Al powder mixture mechanically processed in planetary mill and prepared V-shaped mixer are presented. It is shown that deposition efficiency 1.5 times higher when coatings obtained from treated components. Subsequent high-temperature treatment furnace chamber creates condition for compound system various stoich...
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