Hydrogen exposure of III-V HEMTs has been shown to cause a threshold voltage shift, AVT. This is a serious reliability concern. This effect has been attributed to a H-induced piezoelectric effect. Formation of TiHX expands the Ti layer in the gate, causing mechanical stress in the underlying semiconductor. This induces piezoelectric charge in the heterostructure underneath the gate that shifts ...

The failure behavior and the corresponding physical mechanism of AlGaN/GaN high electron mobility transistors (HEMTs) under transmission line pulse (TLP) stress were investigated in this paper. result shows that output transfer characteristics HEMTs after 90 cycles begin to degrade by comparing with fresh ones 40 V TLP voltage, gate leakage current devices slightly increases. When voltage 52 wa...

This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and inside the III-N barrier cause an increase in dynamic on-resistance and a shift of threshold voltage, ...

III-nitride high-electron mobility transistors (HEMTs) are in demand as commercial power amplifying devices based on their high breakdown field and high operating voltage, as well as wide band gap [1]. As opposed to the standard Ga-polar heterostructures, N-polar devices are better suited for sensors and enhancement mode transistors [2]; advantages include a strong back-barrier and low contact ...

2010 marked the 30 anniversary of the HighElectron Mobility Transistor (HEMT). The HEMT represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular beam epitaxy technology. The HEMT showcased the outstanding electron transport characteristics of twodimensional electron gas (2DEG) systems in III-V compound semiconductors. In the last 30 years, ...

A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. This sensor combined the advantages of the ion sensitivity of AlGaN/GaN HEMTs and specific recognition of ion imprinted polymers. The current response showed that the fabricated sensor is highly sensitive and selective to phosphate ...

Silicon substrates offer an attractive substrate platform for GaN RF and power electronics. In this work, we address the key challenges and provide solutions for the RF-MBE growth of GaN high-electron-mobility transistors (HEMTs) on Si(111). Moreover, by developing low-leakage buffer layers and employing raised source/drain regrown ohmic contacts, high-performance HEMTs are realized at a signif...

GaN HEMTs (High Electron Mobility Transistors) are promising candidates for high power and high frequency applications but their reliability needs to be established before their wide deployment can be realized. In this thesis, degradation mechanisms of GaN HEMTs under high-power and high-temperature stress have been studied. A novel technique to extract activation energy of degradation rate fro...

We have developed a model for the impact of the hydrogen-induced piezoelectric effect on the threshold voltage of InP HEMTs and GaAs PHEMTs. We have used two-dimensional (2-D) finite element simulations to calculate the mechanical stress caused by a Ti-containing metal gate that has expanded due to hydrogen absorption. This has allowed us to map the 2-D piezoelectric charge distribution in the ...