The vacancy formation dynamics in doped semicon- ductor heterostructures with quantum dots (QDs) formed the AlAs anionic sublattice has been studied. A theoretical model that describes effect of doping on generation is constructed. It shown positively charged arsenic vacancies more probable than neutral ones at high hole concentrations. On other hand, electron concentrations, efficient ones. ex...

A terahertz quantum cascade laser is presented in which selectively placed pure AlAs barriers are used to reduce parasitic leakage currents to the conduction band continuum. The design is demonstrated to have improved temperature performance over a regrowth of the current Tmax 200 K record holder (181 K vs. 175 K). Strangely, it fails to lase below 70 K, which we attribute to negative different...

An InGaAs/GaAs quantum well ~QW! disordering technique using AlAs native oxide and thermal annealing is presented. Unlike dielectric cap disordering, the AlAs native oxide can be placed close to quantum wells allowing for a spatially selective disordering deep within multilayer structures. The QW energy shifts and spatial control of the disordering were studied with photoluminescence and cathod...

Vertical optical confinement is a critical requirement for wide range of III-V photonic devices where Al 2 O 3 material the typical oxide used due to its low refractive index. This layer can be formed from oxidation AlAs in an epitaxial GaAs/AlAs/GaAs or AlGaAs/AlAs/GaAs stack, with advantage that top remains single-crystalline. The thick film required applications. In this article, we report p...

Schematic representation of orientation specific Ge/AlAs/GaAs and InGaAs/InP fin transistor architecture their carrier lifetimes.