The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy ...

Abstract: Electrical sensitivity of a boron nitride nanotube (BNNT) was examined toward ethyl acetylene (C4H6) molecule by using density functional theory (DFT) calculations at the B3LYP/6-31G (d) level, and it was found that the adsorption energy (Ead) of ethyl acetylene the pristine nanotubes is about -1.60kcal/mol. But when nanotube has been doped with Si an...

The first-principles density functional molecular dynamics simulations have been carried out to investigate the geometric, the electronic, and the finite temperature properties of pure Li clusters Li10, Li12 and Al-doped Li clusters Li10Al, Li10Al2 . We find that the addition of two Al impurities in Li10 results in a substantial structural change, while the addition of one Al impurity causes a ...

Precipitation behaviour of wrought Al-6Mg alloys with ternary scandium and quaternary zirconium and titanium has been studied. Hardness measurements and resistivity studies are employed to assess the precipitation behaviour of scandium doped Al-6Mg alloy without or with quaternary additions of zirconium and titanium. Further, the kinetics of precipitations are studied by differential scanning c...

Introduction of the nanoparticles in the bulk glass received a large interest due to their versatile application. The composition of Er+3-doped Zinc-Lead-Phosphate glass samples are prepared by melt-quenching technique. The structural and optical properties of phosphate glass have been examined by x-ray diffraction, fie...

For the first time, we fabricated p-type FETs using an individual heavily Al-doped α-Si3N4 NW with a single-crystal structure. The results show that despite a heavy Al-doping level, a typical device still exhibits high performance with an extremely high on/off ratio, 10(3), at Vds = -5 V.

Either metal/metal or metal/non-metal co-doping is one of the most effective methods to modulate visible emission ZnO. In this paper, ZnO, aluminum-doped ZnO (Al-ZnO), aluminum and silver co-doped (Al/Ag-ZnO), nitrogen (Al/N-ZnO) are deposited. Combining substitution zinc ions using Al and/or Ag doping oxygen N expected introduce more interstitial vacancy defects related light in films. The res...