Al2O3 is commonly used as host material for Er-doped integrated optical amplifiers. In this paper, a Graeco-Latin square is used in DC reactive magnetron sputtering deposition experiment in order to get low optical losses Al2O3 layer. By reasonable selection and careful arrangement of experimental parameters, an optimal combination of deposition parameters is obtained via statistic analysis wit...

The densification behavior and mechanical properties of B4C hot-pressed at 2000°C for 1 h with additions of Al2O3 up to 10 vol% were investigated. Sinterability was greatly improved by the addition of a small amount of Al2O3. The improvement was attributed to the enhanced mobility of elements through the Al2O3 near the melting temperature or a reaction product formed at the grain boundaries. As...

An investigation into the structure and chemical stability of green light emitting aluminum complexes of 8-hydroxyquinoline (Alqx)/Al2O3 colloids was performed. (Alqx)/Al2O3 ethanol colloid was characterized by the high resolution transmission electron microscopy (HRTEM), Fourier transform infrared spectroscopy, thermogravimetric and simultaneous differential thermal analysis, and thermogravime...

Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al2O3, GaN:Er/GaN/AlN/Al2O3, GaN:Er/GaN/Al(0.75)Ga(0.25)N/AlN/Al2O3, and GaN/GaN:Er/GaN/Al2O3. Optical loss at 1.54 μm in these waveguide structures has been measured. It was found that the optical attenuat...

Based on Density Functional Theory – Generalized Gradient Approximation calculations (DFT-GGA), we provide a theoretical model for the H2 combustion on Al2O3 supported catalytically active Pt nanoclusters. In a previous paper (Synowczynski, 2008), we identified several adsorption and dissociation processes that occur on the Al2O3 support and demonstrated that products from these reactions can m...

The bias stability of zinc-tin-oxide ZTO thin-film transistors TFTs with either Al2O3 gate dielectrics deposited via atomic layer deposition ALD or SiO2 gate dielectrics deposited via plasma-enhanced chemical vapor deposition PECVD was compared. Both device types showed incremental mobility 11 cm2 /V s, subthreshold slopes 0.4 V /dec, and ION / IOFF ratios of 107. During repeated ID-VGS sweepin...

The short lifetime of photogenerated charge carriers of hematite (α-Fe2O3) thin films strongly hindered the PEC performances. Herein, α-Fe2O3 thin films with surface nanowire were synthesized by electrodeposition and post annealing method for photoelectrocatalytic (PEC) water splitting. The thickness of the α-Fe2O3 films can be precisely controlled by adjusting the duration of the electrodeposi...

ALD Al2O3/GaAs and Al2O3/In0.2Ga0.8As MOS and source-drain implanted MOSFET structure were fabricated and characterized by capacitance-voltage (CV) and current-voltage (I-V) measurements. It is shown that, after high-temperature anneal, the MOS leakage current density of the thinner (16nm) film is much higher than that of the thicker (30nm) film. The highquality Al2O3 (30nm)/In0.2Ga0.8As interf...

The characterization of mixed oxides of TiO2/SiO2 and TiO2/Al2O3 prepared by sol-gel methods is described. Application of the TiO2/Al2O3 material for the photocatalytic decomposition of salicylic acid gave improved activity relative to TiO2-only materials. The photocatalytic activity of TiO2/SiO2, TiO2/Al2O3, and TiO2 toward the photocatalytic decomposition of phenol demonstrated the enhancemen...

This paper reports results of a study regarding the activities of nano structure Mn/γ-Al2O3 and γ-Al2O3 catalysts for oxidation of 2-propanol (as a model of volatile organic compound). Nanostructure of catalysts was revealed using XRD, SEM and TEM techniques. Catalytic studies were carried out in U-shaped packed bed reactor under atmospheric pressure and at the reaction temperature of 150- 500°...