Zinc oxide (ZnO) thin films were prepared by modified Successive Ionic Layer Adsorption and Reaction (SILAR) method. The optical, structural and antibacterial properties of the prepared ZnO films were analyzed as a function of its annealing temperature lying in the range of 250oC to 450oC. Optical properties were studied using UV-Visible spectroscopy and Photoluminescence spectroscopy (PLS). Op...

Novel chitosan-zinc copper oxide (Zn1-xCuxO) composites were electrochemically synthesized through galvanostatic deposition. The prepared chitosan-based composite thin films were elaborately investigated to determine their structural, morphological, compositional, impedance, and corrosion properties. X-ray diffraction analysis was performed to reveal their structural orientation of composite th...

The microstructure and micro-composition of ZnO thin films doped with Al, deposited on Si/SiO2 substrates by sol-gel method were investigated by scanning and high resolution transmission electron microscopy and related energy dispersive X-ray analyses (SEM-EDX, STEM-HRTEM/EDX). Thin films of ZnO were prepared by deposition of 1-10 successive layers with 0.5 at.% and 5 at.% Al concentrations. Th...

The photocatalytic activity and stability of thin, polycrystalline ZnO films was studied. The oxidative degradation of organic compounds at the ZnO surface results from the ultraviolet (UV) photo-induced creation of highly oxidizing holes and reducing electrons, which combine with surface water to form hydroxyl radicals and reactive oxygen species. Therefore, the efficiency of the electron-hole...

ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...

Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1...

Thin film of zinc oxide was prepared by spin coating on pyrex glass using zinc acetate dehydrate, 2-methoxyethanol and monoethanolamine (MEA) as a precursor, solvent and stabilizer respectively. Also, Aluminium-doped thin film of ZnO was prepared by using AlCl3. Deposited thin films were investigated for structural and optical properties using X-ray diffraction (XRD) and UV–VIS-NIR spectrophoto...

Thin film of zinc oxide was prepared by spin coating on pyrex glass using zinc acetate dehydrate, 2-methoxyethanol and monoethanolamine (MEA) as a precursor, solvent and stabilizer respectively. Also, Aluminium-doped thin film of ZnO was prepared by using AlCl3. Deposited thin films were investigated for structural and optical properties using X-ray diffraction (XRD) and UV–VIS-NIR spectrophoto...

Purpose and Background: In recent years, the application of zinc oxide (ZnO) thin films as an active channel layer in TFTs has become of great interest owing to their specific characteristics. ZnO is transparent in the visible wavelengths region because of its wide band gap (~3.37eV), and the ability to fabricate good quality films over large areas at low temperature suggests the compatibility ...

ON THE PROPERTIES OF INDIUM DOPED ZnO THIN FILMS 4.