Organic light emitting diodes (OLEDs) have great potential to replace current commercial display offerings. However, most of the materials comprising the OLEDs suffer degradation effects from the presence of environmental oxygen and water, as both compounds can penetrate into the device. Much research and effort have been put into fabrication methods and proper device encapsulation to help miti...

We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and bistability; precision, high-bandwidth current switching data are collected in response t...

Electron tunneling experiments involving Hg-Hg junctions incorporating two alkanethiolate monolayers are described. Formation of a symmetric junction (Hg-SCn-CnS-Hg) is accomplished by bringing in contact two small (3 × 10-3 cm2) mercury drop electrodes in a 5-20% (v/v) hexadecane solution of an alkanethiol. Formation of asymmetric junctions (Hg-SCn-CmS-Hg) and junctions containing n-alkane-3th...

The effect of tetraethylammonium (TEA) bromide on the neurally and iontophoretically evoked endplate current (EPC) of frog sartorius muscle was investigated using voltage-clamp and noise analysis techniques, and its binding to the acetylcholine (ACh) receptor ionic channel complex was determined on the electric organ of Torpedo ocellata. TEA (250-500 microM) produced an initial enhancement foll...

Simulations of threshold voltage shift of a p-channel Ge/Si heteronanocrystal floating gate memory device were carried out using both a numerical two-dimensional Poisson–Boltzmann method and an equivalent circuit model. The results show that the presence of a Ge dot on top of a Si dot significantly prolongs the retention time of the device, indicated by the time decay behavior of the threshold ...

The threshold voltage shift of a p-channel Ge/Si hetero-nanocrystal floating gate memory device was investigated both numerically and phenomenologically. The numerical investigations, by solving 2-D Poisson-Boltzmann equation, show that the presence of the Ge on Si dot tremendously prolongs the retention time, reflected by the time decay behavior of the threshold voltage shift. The increase of ...