This paper describes the possibilities for mathematical modelling of gap-less surge arresters in the simulation software DYNAST. This tool does not belong to standard modelling softwares in the field of electric power engineering. However, it may provide some key advantages when compared to more frequently used software such as EMTP-ATP and MATLAB-Simulink. Description of the metal oxide varist...

-In this paper, the findings from systematic experiments with the purpose to determine the degradation effect of single and multiple current pulses on the microstructure of the Metal Oxide (MO) varistor are described. Six distribution class varistors from one manufacturer were used in these experiments. The first part of the paper describes the electrical condition after application of single a...

Significance Part 6: Textbooks, tutorials and reviews Part 7: Mitigation techniques Trade press announcement of the introduction to the U.S. market of Metal-Oxide Varistors intended for incorporation in original equipment manufacturers (OEM) equipment, with discussion of the principle of operation, background information on the origin of transients, and application information. It is noteworthy...

High voltage gradient ZnO-based thick film varistors were fabricated by low-temperature sintering. The effect of sintering temperature on electrical properties of thick film varistors was investigated. The voltage gradient of thick film varistors increased significantly to 3159.4 V/mm after sintering at 725°C for 30 min. The small average grain size with good grain boundaries was the origin for...

The influence of sintering time on the microstructure and electrical properties ZnO-CoO-SLS (soda lime silica) glass varistor based ceramics has been investigated. With increased time, density sintered pellets from 5.060 to 5.644 g/cm3 resulting in an increase nonlinear coefficient barrier height 6.742 8.252 0.846 0.955 eV, respectively. breakdown voltage is inversely proportional leakage curre...

The results on measuring the I-V characteristics of metal-semiconductor transition within Ti(200nm)|Si@O@Al(179nm)|Ti(203nm) test structure are presented. basis Si@O@Al nanocomposite is a solid solution Al in amorphous silicon a-Si(Al). I–V has form characteristic reverse-biased ohmic contact between metal and p-type semiconductor, which implies that a-Si(Al) substitutional solution. It shown f...