In a large-scale pilot plant, studies on wet-mechanical treatment of bottom ash using the SYNCOM-Plus process were carried out by MARTIN GmbH in the SYNCOM waste-toenergy plant in Arnoldstein, Austria (approx. 11000 kg/h waste throughput). Granulate of > 2 mm and fine fraction of < 5 mm were produced by dry screening, washing and wet screening. Additionally, sludge was separated from the wash w...

After nuclear accident in 2011, incineration residue contaminated by radioactive cesium had been produced. Government decided in 2011 that incineration residue with less than 8000 Bq/kg of radioactivity could be disposed of into conventional MSW landfill. Since radioactivity of bottom ash was reported to be low compared with fly ash, it had been disposed of MSW landfill based on the government ...

The Urals and Siberian vacuum residues are considered difficult to process in the ebullated bed hydrocracking because of their increased tendency form sediments. Their achievable conversion rate reported literature is 60%. Intercriteria analysis was used assess data from a commercial residue hydrocracker during processing blends three residues: Urals, Light, Basra Heavy. revealed that main cont...

Graphene or reduced graphene oxide (rGO) membrane-based materials are promising for many advanced applications due to their exceptional properties. One of the most widely used synthesis methods for rGO membranes is vacuum filtration of graphene oxide (GO) on a filter membrane, followed by reduction, which shows great advantages such as operational convenience and good controllability. Despite v...

The use of reclaimed asphalt pavement (RAP) to create recycled mixture is attracting great interest because landfill space decrease and natural resources saving. Also, incorporating rejuvenators an effective method promote the utilization RAP materials in hot mix (HMA) production. main goal this study was evaluate effect Cyclogen vacuum bottom (VB) on performance mixtures against moisture sensi...

A new diketopyrrolopyrrole derivative 1 exhibits excellent hole mobilities of 0.7 cm(2) V(-1) s(-1) and a current on/off ratio of 10(6) under ambient conditions in bottom-gate, top-contact organic thin film transistors (OTFTs) fabricated by vacuum deposition.