background: type ii diabetes is known as one of the most important, prevalent, and expensive diseases of mankind. late diagnosis and subsequent delayed initiation of treatment or surveillance of patients create a variety of problems for affected individuals. this has raised increasing concerns for public health authorities throughout the world. in the current study, we aimed to find a new appro...

Arsenene has received considerable attention because of its unique optoelectronic and nanoelectronic properties. Nevertheless, the research on van der Waals (vdW) heterojunctions based arsenene just begun, which hinders application in fields. Here, we systemically predict stability electronic structures arsenene/WS2 vdW heterojunction first-principles calculations, considering stacking pattern,...

it has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). due to the optimization, one can also obtain increas...

As important third-generation semiconductors, wurtzite III nitrides have strong spontaneous and piezoelectric polarization effects. They can be used to construct multifunctional polar heterojunctions or quantum structures with other emerging two-dimensional (2D) semiconductors. Here, we investigate the effect of GaN on interfacial charge transfer electronic properties GaN/MoS2 by first-principl...

The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determined to be 60° dislocation and 90° full-edge dislocation. The full-field strains at the Ge/Si hetero...

We report on organometallic synthesis of luminescent (ZnSe/CdS)/CdS semiconductor heterostructured nanorods (hetero-NRs) that produce an efficient spatial separation of carriers along the main axis of the structure (type II carrier localization). Nanorods were fabricated using a seeded-type approach by nucleating the growth of 20-100 nm CdS extensions at [000 +/- 1] facets of wurtzite ZnSe/CdS ...

The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...

when grown in monolayer culture at low density and with the addition of serum, cartilage cells dedifferentiate or are overgrown by fibroblast-like cells. the aim of this study was to optimize the cultivation of chondrocytes in monolayer culture and to slow down their transformation or their overgrowth by fibroblast-like cells. the interaction between chondrocytes and cartilage-specifc matrix is...