The difference between the performance of TSVs manufactured using SF6/O2 plasma etching or a Bosch process is explored through simulations. The geometric ratio of the sample TSV is approximately 5μm:58μm. The electrical performance of the devices is explored through capacitance and resistance extraction, while the reliability is analyzed using thermo-mechanical and electromigration simulations ...

The resistance change due to electromigration induced voiding in modern copper interconnects ended by a Through Silicon Via (TSV) is analyzed. It is shown that two different modes of resistance increase exist during the period of void growth under the TSV. Primarily responsible are imperfections at the TSV bottom introduced during the fabrication process. Consequently, the time to failure of su...

BACKGROUND/AIM To elucidate the early surgical advantages of a 23-gauge trocar combined with a one-directional valve system in transconjunctival pars plana vitrectomies. MATERIALS AND METHODS Early surgical results of 432 eyes of 432 patients (190 female and 242 male) who underwent 23-gauge (23G) transconjunctival sutureless vitrectomies (TSV) were evaluated. Sixty-three patients out of 432 u...

3D IC packaging offers miniaturization, high performance, low power dissipation, high density and heterogeneous integration. Through-silicon via (TSV) and bonding technologies are the key technologies of 3D IC, and the corresponding reliability has to be well evaluated and qualified before real production applications. This paper reviews the emerging 3D interconnection technologies in worldwide...

In this paper, the existing lumped circuit model for Through-Silicon-Via (TSV) structure embedded in Lightly-doped silicon substrate is reviewed and improved. A new lumped circuit model for TSV structure in heavily-doped silicon substrate is proposed. The underlying physics associated with the proposed lumped elements in the circuit topology is discussed and their values are found by data fitti...

3D IC is emerging as a powerful solution for the next-generation system packaging and integration technology to achieve low power consumption, high channel bandwidth and high density integration capability simultaneously. As for the vertical interconnect for a 3D IC, through-silicon via (TSV) is a key component which can provide a significant performance improvement with greatly reduced physica...

Short-rage wireless communication technology has been widely applied. In the ubiquitous era, applications for connecting things have been expanding. When communication range is shorter than 1/10 of its wave length, the electromagnetic field shows unique characteristics of near field. For instance, inter-chip wireless communication of chips that are stacked in a package is the near-field communi...

Considerations of urban microclimate and thermal comfort are necessary for development, a set guidelines comfortable must be developed. However, to develop such guidelines, the predictive ability indices outdoor perceptions under different design decisions defined. The present study aimed determine suitable assessing reaction in humid subtropical residential areas China. Five criteria coefficie...

In three dimensional integrated circuits (3D-ICs), through silicon via (TSV) is a critical technique in providing vertical connections. However, the yield and reliability is one of the key obstacles to adopt the TSV based 3D-ICs technology in industry. Various fault-tolerance structures using spare TSVs to repair faulty functional TSVs have been proposed in literature for yield and reliability ...

Numbering in excess of 10 million per milliliter of water, it is now undisputed that aquatic viruses are one of the major factors shaping the ecology and evolution of Earth's microbial world. Nonetheless, environmental viral diversity and roles remain poorly understood. Here we report the first thorough characterization of a virus (designated TsV) that infects the coastal marine microalga Tetra...