نتایج جستجو برای: trench

تعداد نتایج: 3041  

2009
Susan Y. Schwartz Larry J. Ruff

Large underthrusting earthquakes in the Solomon Islands tend to occur as multiplets, separated by a few hours to several days in time and 30—100 km in space. The largest sequence, a doublet on July 14, 1971 (M~= 8.0) and July 26, 1971 (M~= 8.1), is particularly unusual in that it occured at the junction of two trenches, with the July 14 event in the Solomon Islands Trench preceding the July 26 ...

Journal: :Current Biology 2010
Sara J. Shettleworth

researchers discovered a new species of snailfish inhabiting trenches there with each trench home to its own species of the fish. “To test whether these species would be found in all trenches, we repeated our experiments on the other side of the Pacific Ocean, some 6,000 miles from our last observations,” said Jamieson. During the three-week expedition of the research vessel Sonne, the research...

Journal: :Microelectronics Reliability 2005
Stephane Azzopardi A. Benmansour M. Ishiko Eric Woirgard

The purpose of this study is an assessment of the Trench IGBT reliability at low temperature under static and dynamic operations by the aim of intensive measurements. The analysis of the Trench IGBT behaviour in these conditions is dedicated to the HEV applications. One question can be raised in case of the use of HEV in countries where during winter the temperature drops down -50°C or less: ar...

2011
Longjiang Zhao Lan Jiang Sumei Wang Hai Xiao Yongfeng Lu Hai-Lung Tsai

During new fiber sensor development experiments, an easy-to-fabricate simple sensing structure with a trench and partially ablated fiber core is fabricated by using an 800 nm 35 fs 1 kHz laser. It is demonstrated that the structure forms a Mach-Zehnder interferometer (MZI) with the interference between the laser light passing through the air in the trench cavity and that in the remained fiber c...

2009

Power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) are the most commonly used power devices due to their low gate drive power, fast switching speed and superior paralleling capability. Most power MOSFETs feature a vertical structure with Source and Drain on opposite sides of the wafer in order to support higher current and voltage. Figure 1a and 1b show the basic device structure...

2018
Rulong Liu Li Wang Qianfeng Liu Zixuan Wang Zhenzhen Li Jiasong Fang Li Zhang Min Luo

Citation: Liu R, Wang L, Liu Q, Wang Z, Li Z, Fang J, Zhang L and Luo M (2018) Depth-Resolved Distribution of Particle-Attached and Free-Living Bacterial Communities in the Water Column of the New Britain Trench. Front. Microbiol. 9:625. doi: 10.3389/fmicb.2018.00625 Depth-Resolved Distribution of Particle-Attached and Free-Living Bacterial Communities in the Water Column of the New Britain Trench

2007
Kerry Sieh Steven N. Ward Danny Natawidjaja Bambang W. Suwargadi

Analyses of coral rings grown in the interval 19701997 reveal a geographically distinct pattern of interseismic uplift off Sumatra's western coast. At distances less than 1 10 km from the Sumatran trench, coral reefs are submerging as fast as 5 mm/y. At 130 and 180 km distance from the trench, they are emerging at similar rates. We suggest hat a locked, or partially locked patch, located above ...

1997

SERs are higher than HERs. These errors stem from two sources: alpha particles and cosmic rays. Alpha particle SERs have been virtually eliminated in modern DRAM technology. No DRAM is entirely insensitive to cosmic rays, but IBM DRAMs have very low cosmic ray sensitivity because the IBM “inside-store” trench cell stores more charge. In addition, the inside-store trench stores the charge in a d...

2003
A. D. Wilson D. G. Lester

Wilson, A. D., and Lester, D. Ci. 2002. Trench inserts as long-term barriers to root transmission for control of oak wilt. Plant Dis. 86: 1067-1074. Physical and chemical barriers to root penetration and root grafting across trenches were evaluated for their effectiveness in improving trenches as barriers to root transmission of the oak wilt fungus in live oaks. Four trench insert materials wer...

2011
A. Tournier F. Leverd L. Favennec C. Perrot L. Pinzelli M. Gatefait N. Cherault D. Jeanjean J.-P. Carrere F. Hirigoyen L. Grant F. Roy

Deep Trench technology for CMOS image sensor was successfully developed and industrialized for bestin-class 1.4μm pixel Front-Side Illumination (FSI) technology. The performance achievements on QE both on and off-axis without any degradation of other pixel parameters show the need of a perfect pixel isolation for better color fidelity. Comparison with other pixel isolation architectures show th...

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