Nanoposts of 10–40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography and inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral pe...

Family members of the cationic transient receptor potential (TRP) channels serve as sensors and transducers of environmental stimuli. The ability of different TRP channel isoforms of specific subfamilies to form heteromultimers and the structural requirements for channel assembly are still unresolved. Although heteromultimerization of different mammalian TRP channels within single subfamilies h...

We report the distance-dependent energy transfer from an InGaN quantum well to graphene oxide (GO) by time-resolved photoluminescence (PL). A pronounced shortening of the PL decay time in the InGaN quantum well was observed when interacting with GO. The nature of the energy-transfer process has been analyzed, and we find the energy-transfer efficiency depends on the 1/d² separation distance, wh...

We measured the time-resolved photoluminescence (PL) on a film of a polythiophene derivative to investigate the formation and relaxation processes of a self-trapped exciton (STE). On the highand low-energy sides of the PL spectrum, we observed an ultrafast decay component emitted during the STE formation. We also found that PL of the derivative originates from two STE states with opposite symme...

In this work, we study the energy transfer mechanism from ZnO nanocrystals (ZnO-nc) to Eu3+ ions by fabricating thin-film samples of ZnO-nc and Eu3+ ions embedded in a SiO₂ matrix using the low-cost sol-gel technique. The time-resolved photoluminescence (TRPL) measurements from the samples were analyzed to understand the contribution of energy transfer from the various ZnO-nc emission centers t...

The GaAs surface passivation effects of epitaxially grown ultra-thin GaP layers and surface As–P exchange have been investigated. Optical properties of passivated and unpassivated InGaAs/GaAs near-surface quantum wells (QWs) grown by metal organic vapor phase epitaxy (MOVPE) are studied by low-temperature continuous-wave and time-resolved photoluminescence (PL). By optimizing the growth conditi...

TRP and TRPL are two light-sensitive cation channel subunits required for the Drosophila photoresponse; however, our understanding of the identities, subunit composition, and function of the light-responsive channels is incomplete. To explain the residual photoresponse that remains in the trp mutant, a third TRP-related subunit has previously been proposed to function with TRPL. Here, we identi...

We have investigated the photoluminescence (PL) of in individual single-walled carbon nanotubes (SWNTs) placed in field-effect transistor structures to study carrier transport in the SWNT. The relation between the recombination lifetime and carrier transit time has been evaluated from the drain-field dependence of PL intensity. Time-resolved photoluminescence of SWNTs dispersed in surfactant so...

The time resolution of scintillation detectors of ionizing radiation is one of the key parameters sought for in the current and future high-energy physics experiments. This study is encouraged by the necessity to find novel detection methods enabling a sub-10-ps time resolution in scintillation detectors and is focused on the exploitation of fast luminescence rise front. Time-resolved photolumi...

High-efficiency InGaN-based yellow light-emitting diodes (LEDs) with high brightness are desirable for future high-resolution displays and lighting products. Here, we demonstrate efficient (∼570 nm) LEDs optimized three-layer staggered quantum wells (QWs) that grown on patterned sapphire substrates. Numerical simulations show the electron–hole wavefunction overlap of InGaN QWs In content exhibi...