نتایج جستجو برای: thin layer interface

تعداد نتایج: 568744  

2002
J. Flokstra H. Rogalla A. van Silfhout

Interdiffusion studies on high-T, superconducting YBasCu,O,_s thin films with thicknes~s in the range of 2000-3000 A, on a Si(ll1) substrate with a buffer layer have been performed. The buffer layer consists of a 400 A thick epitaxial Nisi, layer, covered with 1200 A of polycrystalline 210,. YBa,Cu,O,_s films were prepared using laser ablation. The YBa,Cu,O,_, films on the Si/NiSi,/ZrOs substra...

Journal: :journal of membrane science and research 0
mohammad khajouei department of chemical engineering, babol noshirvani university of technology, shariati ave.,babol, iran, post code 47148-71167 majid peyravi department of chemical engineering, babol noshirvani university of technology, shariati ave.,babol, iran, post code 47148-71167 mohsen jahanshahi department of chemical engineering, babol noshirvani university of technology, shariati ave.,babol, iran, post code 47148-71167

over the past decade, many applications were intended for filtration by membrane technology especially the thin film composite (tfc) membranes. in advanced developments of thin film membranes, an attempt was made to spread a new generation of membranes called thin film nano composite (tfn) membranes. however, in the last generation of tfns, an ultrathin selective film of nanoparticles is coated...

Journal: :Nanoscale 2015
Felix Gunkel Sebastian Wicklein Susanne Hoffmann-Eifert Paul Meuffels Peter Brinks Mark Huijben Guus Rijnders Rainer Waser Regina Dittmann

The electrical properties of the metallic interface in LaAlO3/SrTiO3 (LAO/STO) bilayers are investigated with focus on the role of cationic defects in thin film STO. Systematic growth-control of the STO thin film cation stoichiometry (defect-engineering) yields a relation between cationic defects in the STO layer and electronic properties of the bilayer-interface. Hall measurements reveal a sto...

2005
J. E. GALLOWAY

Results of flow visualization experiments are presented to clearly identify the trigger mechanism for critical heat flux (CHF) in flow boiling. It is shown that discrete bubbles which form following the onset of nucleation coalesce into a wavy vapor layer at fluxes well below CHF. Depressions in the layer interface were observed to touch the heater surface periodically, painting a thin liquid s...

The present contribution deals with the numerical modeling of railway track-supporting systems-using coupled finite-infinite elements-to represent the near and distant field stress distribution, and also employing a thin layer interface element to account for the interfacial behavior between sleepers and ballast. To simulate the relative debonding, slipping and crushing at the contact area betw...

2002
C. Narayan

Some applications in microelectronics call for freestanding polyimide films with fine metallic wiring patterns that are thinner than commercially available copper-clad polyimide sheets, which are typically greater than 25 pm in thickness. This work describes a laserassisted technique to fabricate freestanding multilayer thin-film wiring with polyimide dielectric insulating layers that are less ...

2001
S. Zhang K. J. Hsia

The strength and durability of adhesively bonded sandwich structures often depend on the mechanisms of fracture, which in turn depend on the properties of the adhesive and the microstructures of the interface. When the thin adhesive layer is ductile, cavitation either within the layer or along the interface is often the dominant failure mechanism. In the present paper, fracture due to cavity gr...

2010
Timothy David Heidel

Organic semiconductor photovoltaics offer a promising route to low-cost, scalable, emissions-free electricity generation. However, achieving higher power conversion efficiencies is critical before these devices can play a larger role in our future energy generation landscape. Organic photovoltaic devices are currently limited by two primary challenges: (1) a trade-off between light absorption a...

2008
A. Poelaert A. Golubov P. Verhoeve A. Peacock H. Rogalla

This paper presents a general model for calculating the density of states and the Cooper pair potential in proximised superconducting biand trilayer films. It is valid for any kind of bilayer S1-S2, whatever the quality of the materials S1 and S2, the quality of the S1-S2 interface and the layer thicknesses. The trilayer model is valid for a thin S3 layer, whereas the other two layers have arbi...

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