Abstract: Different thickness of Cu2S thin films were prepared by vacuum evaporation under a pressure of 10-6 torr at an evaporation rate of 3Å /sec. Cu2S has direct band gap energy and indirect band gap energy at 1.2eV and 1.8 eV respectively. This paper presents the analysis of structural and optical properties of the Cu2S thin film by X-ray diffractometer (XRD) and UV-Vis-NIR Spectrophotomet...

The electron beam assisted chemical vapor deposit ion of silicon nitride anti-reflection coatings onto thin film CdS/CuInSe2 solar cells and the resultant effects on their performance are reported. In some cases large increases in the short circuit current, open circuit voltage and fill factor were observed. The present results are explained by the usual index matching anti-reflection mechanism...

A pixel design for active matrix organic light emitting diode (AM-OLED) displays employing hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) is proposed. The proposed pixel circuit, which composed of five TFTs and one capacitor, could compensate the shift of threshold voltage of OLED as well as the threshold voltage of a-Si:H. We fabricated the pixel circuits on the glass sub...

titanium nitride-copper (tin-cu) nanocomposite films were deposited onto stainless steel substrate using hollow cathode discharge ion plating technique. the influence of cu content in the range of 2-7 at.% on the microstructure, morphology and mechanical properties of deposited films were investigated. structural properties of the films were studied by x-ray diffraction pattern. topography of t...

Differential terahertz (THz) time-domain spectroscopy (TDS) is a technique for decreasing noise levels in THz thin film characterization experiments. Characterizing thin films in the GHz to THz range is critical for the development of fast integrated circuits and photonic systems, and is potentially applicable to biosensors and proteomics. This paper shows how the differential technique, combin...

High-Performance Thin-Film Solar Cells In article number 2207966, Jung-Je Woo, Jin Hyeok Kim, Hyeong-Jin and co-workers demonstrate the Mg- Ga-doped ZnO/Li-doped graphene oxide transparent electrode (TE)/electron-transporting layer (ETL) combination in thin-film solar cells. This newly designed TE/ETL not only increases electron collection rate but also suppresses open-circuit voltage deficit, ...

A new voltage-programmed pixel circuit using soluble-processed organic thin film transistors (OTFTs) for an active matrix organic light emitting diode (AMOLED) is proposed. The proposed circuit is composed of four switching TFTs, one driving TFT and one storage capacitor, which is simulated by HSPICE. The proposed circuit can compensate for the non-uniformity of OLED current caused by the thres...

We have developed an integrated circuit for in situ monitoring and characterization of CMOS post-process micromachining. In our demonstration, the circuit provides automated readout of N-well resistors surrounding each of 140 micromachining test structures at up to 14,000 samples per second per device during the post-process silicon etch. We use this circuit to examine the effect of pit size, s...

Light trapping in planar ultrathin-film solar cells is limited due to a small number of optical modes available in the thin-film slab. A nanostructured thin-film design could surpass this limit by providing broadband increase in the local density of states in a subwavelength volume and maintaining efficient coupling of light. Here we report a broadband metasurface design, enabling efficient and...

xv