The use of Raman spectroscopy for on-line monitoring of the production of superconducting YBa2Cu3O6+X (YBCO) thin films on long-length metal tapes coated with textured buffer layers is reported for the first time. A methodology is described for obtaining Raman spectra of YBCO on moving tape exiting a metal-organic-chemical-vapor-deposition (MOCVD) enclosure. After baseline correction, the spect...

Calcium-doped praseodymium manganite films (Pr0.7Ca0.3MnO3, PCMO) were prepared by metal-organic chemical vapor deposition (MOCVD) on SrTiO3 (001) and SrTiO3 (110) single-crystal substrates. Structural characterization through X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) analyses confirmed the formation of epitaxial PCMO phase films. Energy dispersive X-ray (E...

A hybrid approach of colloidal lithography and metalorganic chemical vapour deposition (MOCVD) has been used to fabricate ZnO nanowire bundles and nanoholes by using a silver metalorganic precursor as the growth catalyst.

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10 18 cm -3 to well above 10 19 cm -3 . The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV ...

Red-emitting (≈643 nm) InGaN multiquantum well active device layers and micro-LEDs are grown by metal organic chemical vapor deposition (MOCVD) on relaxed templates, the latter created via thermal decomposition of an underlayer, examined power- temperature-dependent photoluminescence electrical measurements. Maximum internal quantum efficiencies determined to be 7.5% at excitation power density...

The influence of precursor structure and reactivity on properties of compound semiconductors grown by metalorganic chemical vapor deposition (MOCVD) is discussed and illustrated with examples for growth of GaAs, ZnSe, and A1,Gal-,N. Gas-phase and surface reactions of organometallic arsenic compounds provide understanding of variation in carbon incorporation levels with precursor structure. Surf...

Gallium Nitride (GaN) is a unique material system that has been heavily exploited for photonic devices thanks to ultraviolet-to-terahertz spectral tunability. However, without a cost effective approach, GaN technology is limited to laboratory demonstrations and niche applications. In this investigation, integration of GaN on Silicon (100) substrates is attempted to enable widespread application...

We report the first photoluminescence (PL) characterization of InAs nanowires (NWs). The InAs NWs were grown on GaAs(111) B and Si(111) substrates using the Au-assisted molecular beam epitaxy (MBE) growth technique or metal-organic chemical vapor deposition (MOCVD). We compared the PL response of four samples grown under different conditions using MBE or MOCVD. High-resolution transmission elec...

Self-assembled InN nanodots have been prepared at 650 degrees C with various V/III ratios from 500 to 30 000 by metal-organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12 000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were ...