We investigated annealing and thickness related performance and degradation of bulk heterojunction solar cells based on regioregular poly(3-hexylthiophene) (RR-P3HT):[6,6]-phenyl C61-butyric acid methyl ester (PCBM). The devices were fabricated with slow drying for different active layer thicknesses (100–200 nm thick), followed by an identical thermal annealing. Photoinduced charge carrier gene...

We examine how thermal annealing affects the fullerene network in conjugated polymer bulk heterojunction (BHJ) solar cells. We begin by creating electron-only devices with a BHJ geometry by blending the fullerene derivative [6,6]-phenyl-C61-butyric-acid-methyl-ester (PCBM) with polystyrene (PS). These electron-only PS:PCBM diodes function even with a poly(ethylenedioxithiophene):poly(styrenesul...

X-ray diffraction (XRD), current–voltage (IV), capacitance–voltage (CV), deep-level transient Fourier spectroscopy (DLTFS) and isothermal transient spectroscopy (ITS) techniques are used to investigate the thermal annealing behaviour of three deep levels in Ga0.986In0.014As heavily doped with Si (6.8× 1017 cm−3) grown by molecular beam epitaxy (MBE). The thermal annealing was performed at 625 ◦...

We present the results of studies on the electrical and physical modifications to Poly(3hexylthiophene), upon thermal annealing. Thermally-induced performance modifications and thermal stability of polythiophene thin film transistors are explored. We observe substantial mobility improvements in devices annealed at low temperatures (<80°C), as well as increases in on/off ratios by two orders of ...

This paper reports the recent progress on the development of double-cantilever infrared (IR) detectors, including the fabrication, the post-process urvature control, and also the first-time demonstration of thermal detection using capacitive-based IR focal plane arrays (FPAs). In this work, implified double-cantilever IR FPAs based on bimaterial SiNx/Al and Al/SiNx cantilevers are fabricated us...

The development, during annealing, of periodic one-dimensional ripple structure has been investigated. The nanoscale ripple array was fabricated on silicon(0 0 1) crystal surface using focused ion beam (FIB). Annealing was performed isothermally in a flowing argon gas ambient at 670 8C. The morphology of the ripple before and after annealing was analyzed by use of atomic force microscope. The h...

Submitted for the MAR14 Meeting of The American Physical Society Atomistic study of rejuvenation of amorphous metals via thermal loading MASATO WAKEDA, Osaka University, JUNJI SAIDA, Tohoku University, JU LI, Massachusetts Institute of Technology, SHIGENOBU OGATA, Osaka University — Rejuvenation is the structural excitation of amorphous system accompanied by enthalpy and free volume rise, and i...

The stress relief of tetrahedral amorphous carbon (ta-C ) films by post-deposition thermal annealing was investigated. The films were subjected to rapid thermal annealing (RTA) for 2 min and conventional furnace annealing (CFA) for 30 min. In both cases, the films were annealed in vacuum with argon (4×10−2 Torr) at successive higher temperatures ranging from 500 to 800°C. It was found that anne...

Deep-level transient Fourier spectroscopy (DLTFS) technique is used to investigate the thermal-annealing behaviour of at least five deep levels in two samples of Ga0.987In0.013N0.0043As0.9957, one medium doped with Si (2× 1016 cm−3) and the second one heavily doped with Si (1× 1018 cm−3) grown by molecular beam epitaxy (MBE). The thermal-annealing study was done at 650, 700, 750 and 800 ◦C for ...

High-pressure torsion (HPT) and thermal annealing were applied to a face-centered cubic as-cast Al0.3CoCrFeNi high entropy alloy. Processing by HPT produced a nanostructure with a higher incremental hardness than in most HPT single-phase materials and subsequent annealing at appropriate temperatures gave an ordered body-centered cubic secondary phase with an additional increase in hardness. The...