Hot-carrier-induced degradation of partially depleted SOI CMOSFETs was investigated with respect to body-contact (BC-SOI) and floating-body (FB-SOI) for channel lengths ranging from 0.25 down to 0.1 m with 2 nm gate oxide. It is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) ...

Smart power ICs, which monolithically integrate low-loss power devices and control circuitry, have attracted much attention in a wide variety of applications [1], [2]. Commonly used smart power devices are the LDMOS and LIGBT implemented in bulk silicon or SOI (Silicon on Insulator). One of the key issues in the realization of such ‘smart power’ technology is the isolation of power devices and ...

We present an analytical model for nanoscale MOSFETs capable to describe the transition from drift-diffusion to ballistic transport. We start from a closed-form model of ballistic Fully Depleted SOI (FDSOI) and Double Gate (DG) MOSFETs with non degenerate statistics, and, on the basis of the Büttiker interpretation of dissipative transport in terms of virtual voltage probes, we show that a long...

The mechanisms by which sensible heat fluxes (SHFs) alter cold pool characteristics and dissipation rates are investigated in this study using idealized two-dimensional numerical simulations and an environment representative of daytime, dry, continental conditions. Simulations are performed with no SHFs, SHFs calculated using a bulk formula, and constant SHFs for model resolutions with horizont...

In this paper an introduction to substrate noise in silicon on insulator (SOI) is given. Differences between substrate noise coupling in conventional bulk CMOS and SOI CMOS are discussed and analyzed by simulations. The efficiency of common substrate noise reduction methods are also analyzed. Simulation results show that the advantage of the substrate isolation in SOI is only valid up to a freq...

SOI technology for state of the art CMOS technology is rapidly approaching maturity. PD-SOI device design has the advantage of easier manufacturing but requires more sophisticated device and circuit design to reduce the effects of the floating-body. FD-SOI device design potentially has the advantage of no floating-body effects but requires very thin silicon films making manufacturing more chall...