Abstract: An ultra-low power (ULP), power gated static random access memory (SRAM) is presented for Internet of Things (IoT) applications, which operates in sub-threshold voltage ranges from 300mV to 500mV. The proposed SRAM has tendency to operate in low supply voltages with high static and dynamic noise margins. The IoT application involves battery enabled low leakage memory architecture in s...

Memory has been facing several problems in which the leakage current is the most severe. Many techniques have been proposed to withstand leakage control such as power gating and ground gating. In this paper a new 8T SRAM cell, which adopts a single bit line scheme has been proposed to limit the leakage current as well as to gain high hold static noise margin. The proposed cell with low threshol...

Low power consumption and stability in Static Random Access Memories (SRAMs) is essential for embedded multimedia and communication applications. This paper presents a novel design flow for power minimization of nano-CMOS SRAMs, while maintaining their stability. A 32 nm High-κ/Metal-Gate SRAM has been used as example circuit. The baseline SRAM circuit is subjected to power minimization using a...

Packet buffers are an essential part of routers. In highend routers these buffers need to store a large amount of data at very high speeds. To satisfy these requirements, we need a memory with the the speed of SRAM and the density of DRAM. A typical solution is to use hybrid packet buffers built from a combination of SRAM and DRAM, where the SRAM holds the heads and tails of per-flow packet FIF...

We report an SRAM with a 90% reduction of activeleakage power achieved by controlling the supply voltage. In our design, the supply voltage of a selected row in the SRAM goes up to 1 V, while that in other memory cells that are not selected is kept at 0.3 V. This suppresses active leakage because of the drain-induced barrier lowering (DIBL) effect. To avoid unexpected flips in the memory cells,...

The SRAM (static random access memory) extensively used in computers, embedding hardware, and other digital systems is a main source of power dissipations. In order to reduce the increasing power dissipation of the SRAM, a low-power adiabatic SRAM is introduced. The proposed SRAM is realized by PAL-2N (pass-transistor adiabatic logic with NMOS pull-down configuration) to reduce its dynamic ener...

In this article, two soft error tolerant SRAM cells, the so-called RATF1 and RATF2, are proposed and evaluated. The proposed radiation hardened SRAM cells are capable of fully tolerating single event upsets (SEUs). Moreover, they show a high degree of robustness against single event multiple upsets (SEMUs). Over the previous SRAM cells, RATF1 and RATF2 offer lower area and power overhead. The H...

In sub-100 nm generation, gate-tunneling leakage current increases and dominates the total standby leakage current of LSIs based on decreasing gate-oxide thickness. Showing that the gate leakage current is effectively reduced by lowering the gate voltage, we propose a local DC level control (LDLC) for static random access memory (SRAM) cell arrays and an automatic gate leakage suppression drive...

A SRAM cell must meet requirements for operation in submicron. As the density of SRAM increases, the leakage power has become a significant component in chip design. The power Consumption is a major issue of today's CMOS Technology. Leakage power is major issue for short channel devices. As the technology is shrinking the leakage current is increasing very fast. so, several methods and techniqu...