Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. Two ways to overcome this difficulty are proposed, both based on spin-polarized transport across a heterojunction. Using a realistic transport model incorporating the relevant spin dynamics of both electrons and holes, it is ar...

We report measurements of spin transitions for GaAs quantum dots in the Coulomb blockade regime and compare ground and excited state transport spectroscopy to direct measurements of the spin polarization of emitted current. Transport spectroscopy reveals both spin-increasing and spin-decreasing transitions, as well as higher-spin ground states, and allows g factors to be measured down to a sing...

for an Invited Paper for the MAR05 Meeting of The American Physical Society Spin Transport in Organic Semiconductors JING SHI, University of Utah Spin injection/detection and coherent transport are necessary ingredients in spin electronics or spintronics. Organic semiconductors are believed to have long spin coherence due to the weak spin-orbit interaction and hyperfine interaction; therefore, ...

A general form of the Hamiltonian for electrons confined to a curved one-dimensional (1D) channel with spin-orbit coupling (SOC) linear in momentum is re-derived and is applied to a U-shaped channel. Discretizing the derived continuous 1D Hamiltonian to a tight-binding version, Landauer-Keldysh formalism (LKF) for nonequilibrium transport can be applied. Spin transport through the U-channel bas...

Spin degree of freedom of electrons is one of the alternative state variables under consideration for processing information, beyond the charge based CMOS technology. The potential of spintronics based research lies in the possibilities for a new generation of computers that can be non-volatile, faster, smaller, and capable of simultaneous data storage and processing all with reduced energy con...

Electronic devices lose efficacy due to quantum effect when the line-width of gate decreases to sub-10 nm. Spintronics overcome this bottleneck and logic gates are building blocks of integrated circuits. Thus, it is essential to control electronic transport of opposite spins for designing a spintronic logic gate, and spin-selective semiconductors are natural candidates such as zigzag graphene n...

This work addresses spin-dependent transport in the heterostructure p-GaAs/GaMnAs/p-GaAs. The diluted ferromagnetic semiconductor GaMnAs layer behaves, within mean field approximation, as a potential well for spin-down carriers and a potential barrier for spin-up ones. Thus the transport would be spin-dependent. The goal of this work is to devise spin filters relevant for spin-dependent optoele...

We construct a unified semiclassical theory of charge and spin transport in chaotic ballistic and disordered diffusive mesoscopic systems with spin-orbit interaction. Neglecting dynamic effects of spin-orbit interaction, we reproduce the random matrix theory results that the spin conductance fluctuates universally around zero average. Incorporating these effects into the theory, we show that ge...