نتایج جستجو برای: single electron device

تعداد نتایج: 1718195  

Journal: :IEEE Electron Device Letters 2021

2006
Thomas Heinzel

The charge stored on a capacitor is not quantized: it consists of polarization charges generated by displacing the electron gas with respect to the positive lattice ions and can take arbitrary magnitudes. The charge transfer across a tunnel junction, however, is quantized in units of the electron charge (singleelectron tunneling), and may be suppressed due to the Coulomb interaction (Coulomb bl...

2005
Takahide Oya Tetsuya Asai Ryo Kagaya Tetsuya Hirose Yoshihito Amemiya

Synchrony detection between burst and non-burst spikes is known to be one functional example of depressing synapses. Kanazawa et al. demonstrated synchrony detection with MOS depressing synapse circuits. They found that the performance of a network with depressing synapses that discriminates between burst and random input spikes increases non-monotonically as the static device mismatch is incre...

2001
Yukinori Ono Kenji Yamazaki Masao Nagase Seiji Horiguchi Kenji Shiraishi Yasuo Takahashi

This paper describes, from the viewpoint of device fabrication, single-electron and quantum devices using silicon-oninsulators (SOIs). We point out that control of the oxidation of Si is quite important and could be the key to their fabrication. We also introduce our technique for making single-electron transistors (SETs), which uses special phenomena that occur during the oxidation of SOIs, an...

Journal: :IEICE Transactions 2006
Yoshihito Amemiya

This paper outlines the method of constructing singleelectron logic circuits based on the binary decision diagram (BDD), a graphical representation of digital functions. The circuit consists of many unit devices, BDD devices, cascaded to build the tree of a BDD graph. Each BDD device corresponds to a node of the BDD graph and operates as a two-way switch for the transport of a single electron. ...

2004
HU Chaohong Sorin Dan COTOFANA JIANG Jianfei

This paper presents an analytic current model for capacitively coupled Single-Electron Tunneling Transistors (SETTs) that is based on a modified M-state steady-state master equation. Based on this current model we also derive a current noise model for SETT. To validate the proposed models we calculate their characteristics at different device parameters and different operation temperatures and ...

1997
J. E. MOOIJ

Single-electronics circuits can detect charges much smaller than the charge of an electron. This enables phenomenally precise charge measurements but it also means that charged defects (often referred to as offset charges) can disrupt device operation. It has been suggested that large scale integration of single-electron devices could be used to construct fast logic circuits with a high device ...

2006
A.Lopez E.Medina

We consider the quantum dot entangler device introduced by Oliver et al. [1] coupled to a single phonon mode. While we take the phonon interaction to all orders, we perform a fourth order calculation in electron-dot coupling. Using the Von Neumann entropy we measure the degree of entanglement. We find that the phonon mechanism habilitates single electron processes which manifest themselves as d...

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