We investigated the tribological interaction between polytetrafluoroethylene (PTFE) and silicon oxide surfaces. A simple rig was designed to bring about a friction between the surfaces via sliding a piece of PTFE on a thermally oxidized silicon wafer specimen. A very mild inclination (~0.5°) along the sliding motion was also employed in order to monitor the tribological interaction in a gradual...

The metal/oxide/n-silicon tunneling diodes with hydrogen (deuterium) passivated Si/SiO2 interface are stressed under hole-injection conditions to investigate the mechanism of gate oxide degradation. Although the isotope effect on soft breakdown was previously observed in the deuterium-annealed metal/oxide/p-silicon devices, no isotope effect on the oxide soft breakdown was observed in the metal...

We demonstrate a silicon photonic platform using thin buried oxide silicon-on-insulator (SOI) substrates using localized substrate removal. We show high confinement silicon strip waveguides, micro-ring resonators and nanotapers using this technology. Propagation losses for the waveguides using the cutback method are 3.88 dB/cm for the quasi-TE mode and 5.06 dB/cm for the quasi-TM mode. Ring res...

Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si) surfaces and nanostructured ones, using Silicon on Isolator (SOI) or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wave...

An external bias is applied to two samples containing composite surface structures, while recording an XPS spectrum. Altering the polarity of the bias affects the extent of differential charging in domains that are chemically or electronically different to create a charge contrast. By utilizing this charge contrast, we show that two distinct silicon nitride and silicon oxynitride domains are pr...

Ultra-thin silicon oxide (a-SiOx:H) films have been grown by means of plasma enhanced chemical vapor deposition (PECVD) to replace the standard hydrogenated amorphous silicon (a-Si:H) passivation layer for silicon heterojunction solar cells to reduce parasitic absorption. Additionally, silicon oxide surfaces are well known as superior substrates for the nucleation enhancement for nanocrystallin...

SOI means Silicon on Insulator. This type of transistors has Silicon-Insulator-Silicon substrate which is different from conventional MOSFET structure where metal layer is used on the top of Insulator [1, . Now a days, the width of the oxide of a MOSFET is reduced from 300nm to 1.2nm and even less with scaling in technology. If it is further reduced, the leakage problems (majorly Sub-threshold ...

In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1 xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction—between titanium oxide and crystalline silicon—where the titanium oxide is deposited via a metal-organic chemical vapor deposition proces...

Using ion implantation different rare earth luminescent centers (Gd, Tb, Eu, Ce, Tm, Er) were incorporated into the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). The silicon dioxide layer did not contain silicon nanoclusters. Efficient electroluminescence was obtained fro...

Bulk silicon is not susceptible to high-cycle fatigue but micron-scale silicon films are. Using polysilicon resonators to determine stress-lifetime fatigue behavior in several environments, oxide layers are found to show up to four-fold thickening after cycling, which is not seen after monotonic loading or after cycling in vacuo.We believe that the mechanism of thin-film silicon fatigue is ‘‘re...