Tip-enhanced Raman spectroscopy (TERS) is used to investigate the influence of strains in isolated and overlapping silicon nanowires prepared by chemical etching of a (100) silicon wafer. An atomic force microscopy tip made of nanocrystalline diamond coated with a thin layer of silver is used in conjunction with an excitation wavelength of 532 nm in order to probe the first order optical phonon...

The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were in...

The low-dimensional electron confinement effects in nanostructures is one of motivation for development of new research areas in growth technologies and materials engineering. To test this fundamental concept, one-dimentional nanostructures, such as nanotubes and nanowires stay good candidates. Thus nanoelectronics is certainly now the branch with the most significant commercial impact as predi...

Silicon nanowire (SiNW) arrays were produced by electroless method on polycrystalline Si substrate, in HF/ AgNO3 solution. Although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. In order to study the influence of etching time (which affects the SiNWs length) on d...

Structures and energetics of various types of silicon nanowires have been investigated using quantum molecular dynamics simulations to determine the most stable forms. The tetrahedral type nanowires oriented in the 111 direction are found to be the most stable. The stability of the cagelike nanowires is determined to lie somewhere between this and tetrahedral nanowires oriented in other directi...

We demonstrate a high-speed polarization-insensitive photoconductor based on intersecting InP nanowires synthesized between a pair of hydrogenated silicon electrodes deposited on amorphous SiO2 surfaces prepared on silicon substrates. A 14-ps full width at half maximum de-embedded impulse response is measured, which is the fastest reported response for a photodetector fabricated using nanowires...

A process methodology enabling the fabrication of various nanodevices is demonstrated that is compatible with standard integrated circuit processes and recently developed MEMS technologies. The basic devices are laterally suspended single-crystal silicon nanowires with diameters from ~20 nm formed by a single DRIE etch step and oxidation thinning cycles. These nanowires can further serve as mol...

The piezoresistance effect of silicon has been widely used in mechanical sensors2–4, and is now being actively explored in order to improve the performance of silicon transistors. In fact, strain engineering is now considered to be one of the most promising strategies for developing high-performance sub10-nm silicon devices. Interesting electromechanical properties have been observed in carbon ...

We report the first ever demonstration of using silane directly in the gas phase and molten gallium in a microwave plasma for bulk nucleation and growth of single-crystal quality silicon nanowires. Multiple nanowires nucleated and grew from micronto millimetre-sized gallium droplets. The resulting nanowires were tens to hundreds of nanometres in diameter and were tens to hundreds of microns lon...

Silicon nanowires of different widths were fabricated in silicon on insulator (SOI) material using conventional process technology combined with electron-beam lithography. The aim was to analyze the size dependence of the sensitivity of such nanowires for biomolecule detection and for other sensor applications. Results from electrical characterization of the nanowires show a threshold voltage i...