Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufa...

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a very thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by Spectroscopic Ellipsometry in the UV-visible range. These measurements reveal that the ...

Redistributions of implanted species after thermal annealing in polycrystalline silicon (poly-silicon) were studied by secondary ion mass spectrometry. Ten different elements were implanted into poly-silicon films grown on Si substrates. The implanted energies were chosen such that the expected ion range is within the poly-silicon film. Thermal anneals were carried out at temperatures between 3...

Ultra-thin films of silicon oxides supported on a MoflOO) surface have been studied using X-ray photoelectron spectroscopy (XPS). The films were synthesized by evaporating Si onto the MO surface in oxygen ambient and were subsequently characterized using XPS with respect to the chemical states of silicon and the composition of the film. It has been found that the silicon oxide, prepared at room...

We present a titanium-silicon oxide film structure that permits polarization modulated infrared reflection absorption spectroscopy on silicon oxide surfaces. The structure consists of a ~6 nm sputtered silicon oxide film on a ~200 nm sputtered titanium film. Characterization using conventional and scanning transmission electron microscopy, electron energy loss spectroscopy, X-ray photoelectron ...

We report here the fabrication of freestanding HfO2 grating by combining fast atom beam etching (FAB) of HfO2 film with dry etching of silicon substrate. HfO2 film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithography and transferred to HfO2 film by FAB etching. The silicon substrate beneath the HfO2 grating region is...

In a collaboration between Pennsylvania State University and Princeton University, we have been laying the foundations for flexible display technology. Flexible substrates including plastic or steel foil, backplanes of organic or silicon transistors, and directly printed RGB organic light emitting diodes are issues central to this collaboration. We present an overview of key recent results. Sil...

The increasing demand for photovoltaic devices and the associated crystalline silicon feedstock demand scenario have led in the past years to the fast growth of the thin film silicon industry. The high potential for cost reduction and the suitability for building integration have initiated both industrial and research laboratories dynamisms for amorphous silicon and micro-crystalline silicon ba...

Nanocrystalline fluorinated silicon films are studied by using Raman spectroscopy, electron paramagnetic resonance, Fourier-transformed infrared spectroscopy, atomic force microscopy, nonlinear laser spectroscopy, and photoluminescence. Electrical properties of nanocrystalline silicon and amorphous silicon films were compared. The field-assisted migration of point defects is dramatic for durabi...

This paper presents research carried out at the University of Southampton into the development of a magnetostrictive thick-film material suitable for use with silicon micromachined devices. This form of magnetostrictive material has previously been deposited onto alumina substrates and this paper reports further work on migrating the technology onto silicon. The evaluation of two alternative gl...