Genetically modified viruses have been proposed recently as templates for the assembly of nanometer-scale components of electronic circuits. Here we show that, in addition to their role as nanotemplates, viruses can actually improve the electron transport properties in semiconductor nanotubes grown on them. In the considered hybrid virus-inorganic nanostructures, which consist of silica or sili...

Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide wi...

We analyze the early stage of the highly anisotropic silicon carbide oxidation behavior with reactive force field molecular dynamics simulations. The oxidation of a-, C,- m-, and Si-crystallographic faces is studied at typical industry-focused temperatures in the range from 900 to 1200 °C based on the time evolution of the oxidation mechanism. The oxide thicknesses and the growth rates are obta...

metal matrix composites have been widely used in industries, especially aerospace industries, due to their excellent engineering properties. however, it is difficult to machine them because of the hardness and abrasive nature of reinforcement elements like silicon carbide particles (sicp).in the present study, an attempt has been made to investigate the influence of spindle speed (n), feed rate...

Silicon Carbide Bipolar Junction Transistors for High Temperature Sensing Applications

we have performed density functional theory (dft) calculations to investigate the properties of defect in arepresentative armchair model of silicon nanotubes (sints). to this aim, the structures of pristine and defective(5,5) sints have been optimized and the properties such as bond lengths, total energies, binding energies,.formation energies, gap energies, and dipole moments have been evaluat...

Isolated point defects possessing a high spin ground state and below-band-gap excitation may play a key role in realizing solid state quantum bits in semiconductors which are the basic building blocks of quantum computers. The silicon vacancy in silicon carbide provides these features, making it a feasible candidate in this special and emerging field of science. However, the exact nature of the...

Wide bandgap semiconductors have expanded the scope of device applications beyond those of silicon and gallium arsenide. Exploitation of wide bandgap semiconductors holds promise for revolutionary improvements in the cost, size, weight and performance of a broad range of military and commercial microelectronic and opto-electronic systems. The inherent material properties of silicon carbide, gal...

A number of investigations carried out in an abrasive jet machining process having a traditional material with traditional nozzle. In some publication are focusing on water jet cutting machining and some are focusing on sand bond grinding , some work are wear behavior of nozzle and some are on performance of material in water jet machining. The present research work give an analysis of performa...