Novel lumped dual-frequency impedance transformers (DFITs) for arbitrary frequency dependent complex loads (FDCLs) are synthesized using the concepts of capacitive and inductive inverters. Such a dual-frequency impedance transformer is constructed with one Pi-shaped lumped inverter and two shunt susceptance blocks at two sides, and get simplified after susceptance merging. The shunt susceptance...

This work investigates the fabrication of a RF (ratio frequency) MEMS (micro elector mechanical system) switch using the standard 0.35 m 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switch is a capacitive type, which is actuated by an electrostatic force. The structure of the switch consists of a CPW (coplanar waveguides) ...

The objective of this research was to design a 0-5 GHz RF SOI switch, with 0.18um power Jazz SOI technology by using Cadence software, for health care applications. This paper introduces the design of a RF switch implemented in shunt-series topology. An insertion loss of 0.906 dB and an isolation of 30.95 dB were obtained at 5 GHz. The switch also achieved a third order distortion of 53.05 dBm ...

The purpose of this research is to analyze the structure and circuit design stand-alone photovoltaic system with a battery-capacitive energy storage device ensure voltage stability under peak variable nature power generated by solar panel. There an original active control scheme for hybrid drive. panel was 100 W. battery part represented 12 V gel lead-acid charging capacity 11 Ah, capacitive co...

MicroElectroMechanical Systems (MEMS) are becoming increasingly important. The benefits of MEMS include small size, low weight, and low cost. In addition, Radio Frequency MEMS switches offer low insertion loss, high quality factor, low power, high isolation, and broadband frequency performance. Modeling of electrostatically-actuated, capacitive switches is reviewed and fabrication steps are des...

This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. ...

This brief presents a fully integrated X-band transmit/receive (T/R) switch using slow-wave transmission lines for X-band phased-array radar applications. The T/R switch was fabricated in a 0.25-μm SiGe bipolar CMOS (BiCMOS) process and occupies 0.73-mm chip area, excluding pads. The switch is based on shunt–shunt topology and employs isolated n-channel (NMOS) transistors and slow-wave microstr...

This paper presents a Sub-mW differential Common-Gate Low Noise Amplifier (CGLNA) for ZigBee standard. The circuit takes the advantage of shunt feedback and Dual Capacitive Cross Coupling (DCCC) to reduce power consumption and the bandwidth extension capacitors to support 2.4 GHz ISM band. An amplifier employing these techniques has been designed and simulated in 0.18 mm TSMC CMOS technology. T...