We studied the magnetic properties of ferromagnetic-semiconductor composites based on nickel and porous-GaN, motivated by effort to couple semiconductor functionality. Nickel-infiltrated nickel-coated (laminated thin-film) porous GaN structures were fabricated electrodeposition, their subsequently examined collectively, vibrating sample magnetometry nanoscale, force microscopy. successfully dem...

The 3ω method is a well established technique for experimentally extracting thermal conductivity of thin films and substrates. The 3ω method calculates thermal conductivity by measuring thin film temperature response to a metal strip heater deposited on the material’s surface. The electrical resistance of the metal strip is used as both heat source and temperature sensor. An important factor in...

Well-crystallized Sn2S3 semiconductor thin films with a highly (111)-crystallographic orientation were grown using RF sputtering. The surface morphology of the Sn2S3 thin films exhibited a sheet-like feature. The Sn2S3 crystallites with a sheet-like surface had a sharp periphery with a thickness in a nanoscale size, and the crystallite size ranged from approximately 150 to 300 nm. Postannealing...

Chemical reactivity and stability of highly epitaxial mixed-conductive LaBaCo2O5.5+δ (LBCO) thin films on (001) LaAlO3 (LAO) single-crystalline substrates, fabricated by using pulsed laser deposition system, were systematically investigated. Microstructure studies from x-ray diffraction indicate that the films are c-axis oriented with the interface relationship of [100]LBCO//[100]LAO and (001)L...

An analysis of the electronic properties of amorphous semiconductor–electrolyte junction is reported for thin (Dox < 20 nm) passive film grown on Nb in acidic electrolyte. It will be shown that the theory of amorphous semiconductor–electrolyte junction (a-SC/El) both in the low band-bending and high band-bending regime is able to explain the admittance data of a-Nb2O5/El interface in a large ra...

We describe current-voltage measurements on superconducting Nb/lnGaAs junction field-effect transistors which reveal a crossover from tunneling-dominated to Andreev scattering-dominated transport at the superconductor-semiconductor contacts as Schottky barrier thickness decreases with increasing interfacial dopant concentration. These measurements are the first demonstration of such a crossover...

The phase noise of an oscillator with a thin-film barium strontium titanate (BST) capacitive tuning element, or varactor, is characterised and benchmarked against the same oscillator with a silicon semiconductor junction varactor. Phase noise tracks closely with varactor Q within a specific voltage range as expected. Compared to the semiconductor varactor-based oscillator, the BST-based oscilla...

End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers, -dihexylquarterthiophene (DH-4T) and -dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtain...

End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers, -dihexylquarterthiophene (DH-4T) and -dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtain...

End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers, -dihexylquarterthiophene (DH-4T) and -dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtain...