Diverse parallel stitched 2D heterostructures, including metal-semiconductor, semiconductor-semiconductor, and insulator-semiconductor, are synthesized directly through selective "sowing" of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. The methodology enables the large-scale fabrication of lateral heterostructures, which offers tremendous potential for its appl...

Metal-semiconductor hybrid nanostructures promise improved photoconductive performance due to plasmonic properties of the metal portions and intrinsic electric fields at the metal-semiconductor interface that possibly enhance charge separation. Here we report gold decorated CdSe nanowires as a novel functional material and investigate the influence of gold decoration on the lateral facets on th...

Interactions between metal and atomically thin two-dimensional (2D) materials can exhibit interesting physical behaviors that are of both fundamental interests and technological importance. In addition to forming a metal–semiconductor Schottky junction that is critical for electrical transport, metal deposited on 2D layered materials can also generate a local mechanical strain. We investigate t...

We introduce a facile and robust methodology for the aggregation-free aqueous-phase synthesis of hierarchically complex metal-semiconductor heterostructures. By encapsulating semiconductor nanostructures within a porous SiO(2) shell with a hollow interior, we can isolate each individual particle while allowing it access to metal precursors for subsequent metal growth. We illustrate this by Pt d...

In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing chara...

A percolation theory approach is taken to investigate electron hopping transport and the metal{non-metal transition in n-type-doped semiconductor systems. The activation energy is calculated for inter-layer hopping events in multiple-layer systems. The corresponding critical sheet density for the metal{non-metal transition is calculated, and it is shown that this increases for increasing-layer ...

-A ID analytical model of the metal-semiconductor contact is developed in the framework of emission theory which exploits an improved description of the transmission probability. The usual WKB approximation is substituted by an interpolation scheme where the eigensolutions of a given potential barrier are expressed by Airy functions and then mapped to Gaussians in order to enable analytical int...