We report on the formation of a lightly doped p–n junction at the surface of compensated p-type silicon wafers, caused by dopant segregation during thermal oxidation. Experimental evidence and characterization of the junction is obtained by secondary ion mass spectrometry and hot probe measurements. For the first time the impact of the unexpected junction on the characterization of metal-oxide-...

In this paper, we report the electrical simulation results of a proposed GaInP nanowire (NW)/Si two-junction solar cell. The NW physical dimensions are determined for optimized solar energy absorption and current matching between each subcell. Two key factors (minority carrier lifetime, surface recombination velocity) affecting power conversion efficiency (PCE) of the solar cell are highlighted...

photodetectors Ayman Karar, Narottam Das, Chee Leong Tan, Kamal Alameh, Yong Tak Lee, and Fouad Karouta Electron Science Research Institute, Edith Cowan University, Joondalup, WA, Australia School of Photonics Science, Gwangju Institute of Science and Technology (GIST), Gwangju, South Korea Department of Information and Communications, GIST, Gwangju, South Korea Department of Nanobio Materials ...

The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical cavity semiconductor optical amplifier (VCSOA) is a modified version of a HELLISH-VCSOA device. It has a shorter p-channel and longer n-channel. The device studied in this work consists of a simple GaAs p-i-n junction, containing 11 Ga0.35In0.65 N0.02As0.08/GaAs multiple quantum wells in its i...

We propose and analyze theoretically an experimental setup for detecting the elusive Majorana particle in semiconductor-superconductor heterostructures. The experimental system consists of one-dimensional semiconductor wire with strong spin-orbit Rashba interaction embedded into a superconducting quantum interference device. We show that the energy spectra of the Andreev bound states at the jun...

Recent advancements in power electronic switches provide effective control and operational stability of grid systems. Junction temperature is a crucial parameter power-switching semiconductor devices, which needs monitoring to facilitate reliable operation thermal electronics circuits ensure performance. Over the years, various junction measurement techniques have been developed, engaging both ...

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regi...

MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the form...

We investigated the thermal performance of a power semiconductor module used in mobile communication systems. The module contained hetero-junction bipolar transistor (HBT) fingers, which were fabricated on the top of a semiconductor substrate. We calculated the thermal resistance between the HBT fingers and the bottom surface of a multi-layer printed circuit board (PCB) using a finite element m...