The synthesis and spectroscopic characterization of new axially ligated indium(III) porphyrin complexes were reported. Chloroindium(III) porphyrin (TPPIn-Cl) was obtained in good yield by treating the corresponding free base with indium trichloride. The action of the different phenols on chloroderivatives (TPPIn-Cl) led to the corresponding phenolato complexes (TPPIn-X). These derivatives were ...

Chemical reduction of graphene oxide (GO) is the main route to produce the mass graphene-based materials with tailored surface chemistry and functions. However, the toxic reducing circumstances, multiple steps, and even incomplete removal of the oxygen-containing groups were involved, and the produced graphenes existed usually as the assembly-absent precipitates. Herein, a substrate-assisted re...

We use a first-principles rational-design approach to demonstrate the potential of semiconducting half-Heusler compounds as a previously unrecognized class of piezoelectric materials. We perform a high-throughput scan of a large number of compounds, testing for insulating character and calculating structural, dielectric, and piezoelectric properties. Our results provide guidance for the experim...

The change in the atomic nitrogen concentration on a semiconducting nanowire's surface and the consequent changes in the electrical characteristics of a nanowire transistor were investigated by exposing In(2)O(3) nanowires to nitrogen (N(2)) plasma. After plasma was applied at N(2) flow rates of 20, 40, and 70 sccm with a fixed source power of 50 W, the In(2)O(3) nanowire transistor exhibited c...

The synthesis, photophysical and photochemical properties of the tetraand octa-[4-(benzyloxyphenoxy)] substituted gallium(III) and indium(III) phthalocyanines are reported for the first time. The new compounds have been characterized by elemental analysis, IR, H NMR spectroscopy and electronic spectroscopy. General trends are described for quantum yields of photodegredation, fluorescence quantu...

Fundamental oscillations up to 1.08 THz with the output power of 5.5 microwatts was achieved in GalnAs/AlAs resonant tunneling diodes (RTDs) at room temperature. The graded emitter, thin barriers, and high-indium-composition transit layers were introduced to reduce the tunneling and transit delays. The first two of these structures are the same as those in RTDs oscillating at 1.04 THz reported ...

Triboelectrification can occur between any two materials with different charge affinities. This phenomenon represents the fundamental physics of triboelectric nanogenerators (TENGs). Organic such as polymers have been widely used in TENGs because their dielectric properties. Inorganic are, however, not studied despite increasing attention paid to perovskite materials. In this paper, a new type ...